ZXMN6A09DN8_07 ZETEX [Zetex Semiconductors], ZXMN6A09DN8_07 Datasheet

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ZXMN6A09DN8_07

Manufacturer Part Number
ZXMN6A09DN8_07
Description
60V SO8 N-channel enhancement mode MOSFET
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet
ZXMN6A09DN8
60V SO8 N-channel enhancement mode MOSFET
Summary
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
Applications
Ordering information
Device marking
ZXMN
6A09D
Issue 6 - January 2007
© Zetex Semiconductors plc 2007
Device
ZXMN6A09DN8TA
V
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOIC package
DC-DC converters
Power management functions
Disconnect switches
Motor control
(BR)DSS
60
0.060 @ V
0.040 @ V
R
DS(on)
GS
GS
Reel size
(inches)
( )
= 4.5V
= 10V
7
I
D
Tape width
5.6
4.6
(A)
(mm)
1
12
G1
Quantity
per reel
500
D1
S1
G2
G1
S2
S1
G2
Top view
www.zetex.com
D2
S2
D1
D1
D2
D2

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ZXMN6A09DN8_07 Summary of contents

Page 1

ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET Summary (BR)DSS DS(on) 0.040 @ V = 10V GS 60 0.060 @ V = 4.5V GS Description This new generation of trench MOSFETs from Zetex utilizes a unique structure ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation 25°C amb Linear derating ...

Page 3

Characteristics Issue 6 - January 2007 © Zetex Semiconductors plc 2007 ZXMN6A09DN8 3 www.zetex.com ...

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Electrical characteristics (at T Parameter Static Drain-source breakdown voltage V Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching ...

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Typical characteristics Issue 6 - January 2007 © Zetex Semiconductors plc 2007 ZXMN6A09DN8 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 6 - January 2007 © Zetex Semiconductors plc 2007 ...

Page 7

Package outline - SO8 DIM Inches Min. Max. A 0.053 0.069 A1 0.004 0.010 D 0.189 0.197 H 0.228 0.244 E 0.150 0.157 L 0.016 0.050 Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 6 ...

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Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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