ZXMN6A09DN8_07 ZETEX [Zetex Semiconductors], ZXMN6A09DN8_07 Datasheet
ZXMN6A09DN8_07
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ZXMN6A09DN8_07 Summary of contents
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ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET Summary (BR)DSS DS(on) 0.040 @ V = 10V GS 60 0.060 @ V = 4.5V GS Description This new generation of trench MOSFETs from Zetex utilizes a unique structure ...
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Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation 25°C amb Linear derating ...
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Characteristics Issue 6 - January 2007 © Zetex Semiconductors plc 2007 ZXMN6A09DN8 3 www.zetex.com ...
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Electrical characteristics (at T Parameter Static Drain-source breakdown voltage V Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching ...
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Typical characteristics Issue 6 - January 2007 © Zetex Semiconductors plc 2007 ZXMN6A09DN8 5 www.zetex.com ...
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Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 6 - January 2007 © Zetex Semiconductors plc 2007 ...
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Package outline - SO8 DIM Inches Min. Max. A 0.053 0.069 A1 0.004 0.010 D 0.189 0.197 H 0.228 0.244 E 0.150 0.157 L 0.016 0.050 Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 6 ...
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Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...