ZXMN6A11DN8_06 ZETEX [Zetex Semiconductors], ZXMN6A11DN8_06 Datasheet - Page 2

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ZXMN6A11DN8_06

Manufacturer Part Number
ZXMN6A11DN8_06
Description
60V SO8 Dual N-channel enhancement mode MOSFET
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
Issue 3 - September 2006
© Zetex Semiconductors plc 2006
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @ V
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Junction to ambient
conditions.
temperature.
(a)(d)
(a)(e)
(b)(d)
(c)
amb
amb
amb
=25°C
=25°C
=25°C
@ V
@ V
GS
GS
GS
(a)(d)
(a)(e)
(b)(d)
= 10V; T
= 10V; T
= 10V; T
(c)
(b)
amb
amb
amb
=25°C
=70°C
=25°C
2
10 sec.
(b)
(b)
(a)
Symbol
Symbol
T
V
R
R
R
V
j
I
I
, T
P
P
P
DM
DSS
SM
I
I
GS
D
S
D
D
D
JA
JA
JA
stg
ZXMN6A11DN8
-55 to +150
Limit
Limit
13.7
13.7
1.25
±20
100
3.2
2.6
2.5
3.1
1.8
2.1
60
10
14
17
70
60
www.zetex.com
mW/°C
mW/°C
mW/°C
°C/W
°C/W
°C/W
Unit
Unit
°C
W
W
W
A
A
A
A
V
V

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