ZXM64N02X_04 ZETEX [Zetex Semiconductors], ZXM64N02X_04 Datasheet
ZXM64N02X_04
Related parts for ZXM64N02X_04
ZXM64N02X_04 Summary of contents
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N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.040 (BR)DSS DS(ON) DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ...
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ZXM64N02X ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =4.5V =4.5V Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T =25°C ...
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Refer Note ( 100ms 10ms 1ms 100us 100m 0 Drain-Source Voltage (V) DS Safe Operating Area Ref Note ( D=0.5 20 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 ...
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ZXM64N02X ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...
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V - Drain-Source Voltage (V) DS Output Characteristics 100 VDS=10V 10 T=150°C T=25°C 1 0.1 1 Gate-Source Voltage (V) GS Typical Transfer Characteristics 1 0.1 VGS=2.0V VGS=2.5V VGS=4.5V 0.01 0.1 ...
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ZXM64N02X 2000 1750 1500 1250 1000 750 500 250 0 0 Drain Source Voltage (V) DS Capacitance v Drain-Source Voltage Basic Gate Charge Waveform Switching Time Waveforms ISSUE 1 - JUNE 2004 TYPICAL CHARACTERISTICS 6.0 Vgs=0V I ...
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ZXM64N02X PACKAGE DIMENSIONS Conforms to JEDEC MO-187 Iss A PAD LAYOUT DETAILS Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 ...