BSS138_11 UTC [Unisonic Technologies], BSS138_11 Datasheet - Page 2

• Manufacturer Part Number: BSS138_11
• Description: N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE
• Manufacturer: UTC [Unisonic Technologies]

BSS138
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient ΔBV
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
ON CHARACTERISTICS (Note)
Gate-Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain–Source On–Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note)
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Max. Diode Forward Current
Note: Pulse test, pulse width ≤ 300us, duty cycle≤ 2%
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Junction to Ambient
ELECTRICAL CHARACTERISTICS
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ABSOLUTE MAXIMUM RATINGS
THERMAL DATA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
PARAMETER
SOT-23-3
SOT-323
DC
Pulse
SOT-23-3
SOT-323
Preliminary
ΔV
SYMBOL
R
V
GS(TH)
BV
t
I
C
C
t
D(OFF)
(T
C
Q
Q
I
I
GS(TH)
DS(ON)
D(ON)
D(ON)
V
g
DSS
Q
(T
GSS
DSS
t
I
OSS
RSS
t
SYMBOL
SYMBOL
ISS
FS
GD
SD
GS
R
F
S
A
DSS
G
A
= 25°C, unless otherwise specified)
/ΔT
=25℃, unless otherwise specified)
V
V
T
/ΔT
θ
P
T
GSS
I
STG
DSS
D
JA
D
J
J
J
V
I
V
V
V
V
I
V
V
V
V
V
V
V
R
V
D
D
GS
DS
DS
DS
DS
GS
GS
GS
DS
DS
DS
DD
GS
G
=250μA,Referenced to 25°C
=1mA, Referenced to 25°C
=6Ω,
=50V, V
=30V, V
=0V, V
=V
=10V, I
=25V, V
=25V, V
=0V, I
=10 V, I
=4.5 V, I
=10 V, V
=30V, I
= 0V, I
TEST CONDITIONS
GS
, I
D
S
GS
D
=250µA
D
D
=0.44A (Note)
D
GS
GS
=1m A
GS
GS
=0.22A
=0.29A,V
D
DS
=±20V
=0.22A
=0.22A
=0V
=0V
=0V, f=1MHz
=10V, I
=5V
-55 ~ +150
RATINGS
RATINGS
D
GS
=0.22A
+150
0.22
0.88
0.36
0.15
±20
=10V,
350
833
50
0.12 0.5
MIN TYP MAX UNIT
0.8
0.2
50
Power MOSFET
1.3
0.7
1.0
1.7
0.1
0.4
2.5
0.8
72
27
13
20
-2
6
9
7
±100
0.22
0.5
0.1
1.5
3.5
6.0
2.4
1.4
18
36
14
QW-R502-271.e
5
UNIT
UNIT
℃
W
℃
℃
mV/℃
mV/°C
V
V
A
2 of 3
/W
nC
nC
nC
µA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
A
S
V
A