VN0104N3 SUTEX [Supertex, Inc], VN0104N3 Datasheet - Page 2

• Manufacturer Part Number: VN0104N3
• Description: N-Channel Enhancement-Mode Vertical DMOS FET
• Manufacturer: SUTEX [Supertex, Inc]

Electrical Characteristics
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
Thermal Characteristics
* I
OUTPUT
D
Symbol
BV
V
∆V
I
I
I
R
∆R
G
C
C
C
t
t
t
t
V
t
TO-92
(continuous) is limited by max rated T
GSS
DSS
D(ON)
d(ON)
r
d(OFF)
f
rr
INPUT
GS(th)
SD
Package
DS(ON)
FS
ISS
OSS
RSS
GS(th)
DSS
DS(ON)
10V
V
0V
0V
DD
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
Gate Body Leakage
Zero Gate Voltage Drain Current
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
10%
I
D
(continuous)*
t
350mA
d(ON)
10%
t
(ON)
GS(th)
DS(ON)
90%
Parameter
t
r
j
.
with Temperature
with Temperature
I
D
90%
t
d(OFF)
(pulsed)
t
(OFF)
(@ 25°C unless otherwise specified)
2.0A
VN0106
VN0104
t
90%
F
10%
Power Dissipation
Min
300
0.8
0.5
2.0
60
40
@ T
2
C
= 25
1.0W
Typ
0.70
-3.8
450
400
1.0
2.5
3.0
2.5
1.2
55
20
5
3
5
6
5
°
C
GENERATOR
Max
-5.5
100
100
2.4
5.0
3.0
1.8
65
25
PULSE
1
1
8
5
8
9
8
°
125
INPUT
R
C/W
θ
gen
jc
mV/°C
%/°C
Unit
m
nA
µA
pF
ns
ns
V
V
A
Ω
V
°
170
C/W
θ
ja
V
V
V
V
V
V
T
V
V
V
V
V
V
V
I
R
V
V
V
f = 1 MHz
D
A
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DD
GS
GS
GS
GEN
= 1A
= 125°C
= 0V, I
= 25V, I
= V
= V
= ± 20V, V
= 0V, V
= 0V, V
= 5V, V
= 10V, V
= 5V, I
= 10V, I
= 10V, I
= 25V
= 0V, I
= 0V, I
= 0V, V
= 25Ω
DS
DS
Conditions
350mA
, I
, I
D
D
SD
SD
I
DS
DS
DS
D
D
DS
D
D
D
DR
= 250mA
= 1mA
DS
= 1mA
= 1mA
=1.0A
=1.0A
= 1A
= 1A
= 0.5A
*
= Max Rating
= 0.8 Max Rating
= 25V
= 25V
V
DS
= 25V
DD
VN0104/VN0106
R
= 0V
L
D.U.T.
OUTPUT
I
2.0A
DRM