VP3203N3 SUTEX [Supertex, Inc], VP3203N3 Datasheet

VP3203N3

Manufacturer Part Number

VP3203N3

Description

P-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

SUTEX [Supertex, Inc]

Datasheet

1.VP3203N3.pdf (4 pages)

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Ordering Information

*Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

†

Features

❏ Free from secondary breakdown

❏ Low power drive requirement

❏ Ease of paralleling

❏ Low C

❏ Excellent thermal stability

❏ Integral Source-Drain diode

❏ High input impedance and high gain

❏ Complementary N- and P-channel devices

Applications

❏ Motor controls

❏ Converters

❏ Amplifiers

❏ Switches

❏ Power supply circuits

❏ Drivers (relays, hammers, solenoids, lamps,

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

MIL visual screening available.

memories, displays, bipolar transistors, etc.)

-30V

DSS

DGS

ISS

and fast switching speeds

(max)

0.6Ω

DS(ON)

(min)

-4.0A

D(ON)

P-Channel Enhancement-Mode

Vertical DMOS FETs

-55°C to +150°C

300°C

± 20V

VP3203N3

TO-92

DGS

DSS

Order Number / Package

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS structures,

these devices are free from thermal runaway and thermally-

induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Package Options

Where ❋ = 2-week alpha date code

Product marking for TO-243AA:

Note: See Package Outline section for dimensions.

TO-243AA*

VP3203N8

TO-92

S G D

VP2L❋

VP3203ND

Die

†

TO-243AA

(SOT-89)

VP3203

Related parts for VP3203N3

VP3203N3 Summary of contents

Page 1

... Vertical DMOS FETs I Order Number / Package D(ON) (min) TO-92 TO-243AA* -4.0A VP3203N3 VP3203N8 Product marking for TO-243AA: Where ❋ = 2-week alpha date code Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with ...

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VP3203N3 SUTEX [Supertex, Inc], VP3203N3 Datasheet

VP3203N3

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VP3203N3 Summary of contents

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