INA-12063-BLK HP [Agilent(Hewlett-Packard)], INA-12063-BLK Datasheet

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INA-12063-BLK

Manufacturer Part Number

INA-12063-BLK

Description

1.5 GHz Low Noise Self-Biased Transistor Amplifier

Manufacturer

HP [Agilent(Hewlett-Packard)]

Datasheet

1.INA-12063-BLK.pdf (24 pages)

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1.5 GHz Low Noise Self-Biased

Transistor Amplifier

Technical Data

Features

• Integrated, Active Bias

• Single Positive Supply

• Current Adjustable, 1 to

• 2 dB Noise Figure at

• 16 dB Gain at 900 MHz

Applications

• Amplifier Applications for

Equivalent Circuit

(Simplified)

5965-5365E

GND 2

INPUT

Circuit

Voltage (1.5 – 5V)

10mA

900 MHz

25 dB Gain at 100 MHz

Cellular, Cordless, Special

Mobile Radio, PCS, ISM,

and Wireless LAN

Applications

RF

CIRCUIT

ACTIVE

BIAS

GND 1

V

FEEDBACK

NETWORK

d

RF

RF

OUTPUT

and V

I

bias

c

Surface Mount Package

SOT-363 (SC-70)

Pin Connections and

Package Marking

RF INPUT

Note:

Package marking provides orientation

and identification.

GND 2

I

bias

1

2

3

6-116

6

5

4 V

RF OUTPUT

and V

GND 1

d

C

INA-12063

Description

Hewlett-Packard’s INA-12063 is a

Silicon monolithic self-biased

transistor amplifier that offers

excellent gain and noise figure for

applications to 1.5 GHz. Packaged

in an ultra-miniature SOT-363

package, it requires half the board

space of a SOT-143 package.

The INA-12063 is a unique RFIC

that combines the performance

flexibility of a discrete transistor

with the simplicity of using an

integrated circuit. Using a pat-

ented bias circuit, the perfor-

mance and operating current of

the INA-12063 can be adjusted

over the 1 to 10 mA range.

The INA-12063 is fabricated using

HP’s 30 GHz f

Silicon bipolar process which

uses nitride self-alignment

submicrometer lithography,

trench isolation, ion implantation,

gold metalization, and polyimide

intermetal dielectric and scratch

protection to achieve superior

performance, uniformity, and

reliability.

MAX

ISOSAT™

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