2SD1101ACTL-E RENESAS [Renesas Technology Corp], 2SD1101ACTL-E Datasheet - Page 2

• Manufacturer Part Number: 2SD1101ACTL-E
• Description: Silicon NPN Epitaxial
• Manufacturer: RENESAS [Renesas Technology Corp]

2SD1101
Electrical Characteristics
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Rev.2.00 Aug 10, 2005 page 2 of 5
Item
Symbol
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
I
CE(sat)
V
h
CBO
FE
BE
Min
120
25
20
—
—
—
5
Typ
—
—
—
—
—
—
—
Max
240
1.0
0.5
1.0
—
—
—
Unit
V
V
V
V
V
A
I
I
I
V
V
I
V
C
C
E
C
CB
CE
CE
= 0.5 A, I
= 10 A, I
= 10 A, I
= 1 mA, R
= 20 V, I
= 1 V, I
= 1 V, I
Test conditions
C
B
C
C
E
BE
E
= 0.05 A
= 0.15 A
= 0.15 A
= 0
= 0
= 0
=
(Ta = 25°C)