GS150TA25104 IXYS [IXYS Corporation], GS150TA25104 Datasheet - Page 2

• Manufacturer Part Number: GS150TA25104
• Description: Gallium Arsenide Schottky Rectifier
• Manufacturer: IXYS [IXYS Corporation]

Conduction
Forward characteristics
Turn off characteristics
Turn on characteristics
© 2003 IXYSRF/Directed Energy, Inc.
IXYSRF/Directed Energy, Inc.
2401 Research Blvd. Ste 108, Fort Collins, CO 80526
Phone: [phone], Fax: [phone], www.directedenergy.com
Explanatory comparison of the basic operational behavior of rectifier diodes and Gallium Arsenide
Schottky diodes:
10.00
1.00
0.10
300
250
200
150
100
1.00E-06
50
0
0.00
Fig. 3 Typical leakage current vs. voltage at 25C
Fig. 1 Typical forward characteristics
0.50
LEAKAGE CURRENT IN AMPERES
Rectifier Diode
By majority + minority carriers
V
Extraction of excess carriers
causes temperature dependant
reverse recovery (t
Delayed saturation leads to V
F
(I
F
)
1.00E-05
Volts
1.00
rr
, I
g
RM
, Q
1.50
rr
)
FR
By majority carriers only
V
Reverse current charges
junction capacity C
not temperature dependent
No turn on overvoltage peak
GaAs Schottky Diode
F
1.00E-04
(I
2.00
GS150TA25104
GS150TI25104
F
), see Fig. 1
100
10
1
160
140
120
100
0.1
1.00E-06
80
60
40
20
0
Fig. 4 Typical leakage current vs. temperature at 100V
J
, see Fig. 2;
Fig. 2 Typical junction capacity versus
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim, Germany
Phone: [phone], Fax: [phone]
1.00E-05
1
R EVER SE BIAS V OLTA GE IN VO LTS
blocking voltage
LEAKAGE CURRENT IN AMPERES
GS150TC25104
Reverse
10
1.00E-04
Doc #9200-0261 Rev 1
100
1.00E-03
1000
1.00E-02