HN58V1001FP-25E RENESAS [Renesas Technology Corp], HN58V1001FP-25E Datasheet
HN58V1001FP-25E
Related parts for HN58V1001FP-25E
HN58V1001FP-25E Summary of contents
Page 1
HN58V1001 Series 1M EEPROM (128-kword Ready/Busy and RES function Description 's Renesas Technology HN58V1001 is an electrically erasable and programmable ROM organized as 131072- word 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced ...
Page 2
... HN58V1001 Series Ordering Information Type No. Access time HN58V1001FP-25 250 ns HN58V1001T-25 250 ns HN58V1001FP-25E 250 ns HN58V1001T-25E 250 ns Pin Arrangement HN58V1001FP Series Busy RDY A15 31 A16 RES 3 A14 A12 29 5 A13 A11 ...
Page 3
HN58V1001 Series Pin Description Pin name A0 to A16 I/ RDY/Busy RES Block Diagram V CC High voltage generator V SS RES OE CE Control logic and timing WE RES A0 ...
Page 4
HN58V1001 Series Operation Table Operation Read Standby Write Deselect Write Inhibit V IL Data Polling V V ...
Page 5
HN58V1001 Series DC Characteristics ( + Parameter Symbol Min Input leakage current I LI Output leakage current I LO Standby V current I CC CC1 I CC2 Operating V current I CC CC3 Output low ...
Page 6
HN58V1001 Series AC Characteristics ( + Test Conditions Input pulse levels (RES pin) CC Input rise and fall time Output load: 1TTL Gate +100 ...
Page 7
HN58V1001 Series Write Cycle Parameter Address setup time Address hold time CE to write setup time (WE controlled) CE hold time (WE controlled write setup time (CE controlled) WE hold time (CE controlled write setup time ...
Page 8
HN58V1001 Series Timing Waveforms Read Timing Waveform Address CE OE High WE Data Out RES Rev.8.00, Nov. 28. 2003, page ACC Data out valid DFR ...
Page 9
HN58V1001 Series Byte Write Timing Waveform (1) (WE Controlled) Address Din High-Z Busy RDY/ t RES RES V CC Rev.8.00, Nov. 28. 2003, page ...
Page 10
HN58V1001 Series Byte Write Timing Waveform (2) (CE Controlled) Address Din High-Z Busy RDY/ t RES RES V CC Rev.8.00, Nov. 28. 2003, page ...
Page 11
HN58V1001 Series Page Write Timing Waveform (1) (WE Controlled) *6 Address A0 to A16 OES Din t DB Busy High-Z ...
Page 12
HN58V1001 Series Page Write Timing Waveform (2) (CE Controlled) *6 Address A0 to A16 OES Din t DB Busy High-Z ...
Page 13
HN58V1001 Series Data Data Polling Timing Waveform Data Data Address OEH Din X I/O7 Rev.8.00, Nov. 28. 2003, page Dout OES ...
Page 14
HN58V1001 Series Toggle bit This device provide another function to determine the internal programming cycle. If the EEPROM is set to read mode during the internal programming cycle, I/O6 will charge from “1” to “0” (toggling) for each read. When ...
Page 15
HN58V1001 Series Software Data Protection Timing Waveform (1) (in protection mode Address 5555 Data AA Software Data Protection Timing Waveform (2) (in non-protection mode Address 5555 AAAA or 2AAA Data AA 55 ...
Page 16
HN58V1001 Series Functional Description Automatic Page Write Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle. Following the initial byte cycle, an additional 1 to 127 bytes can ...
Page 17
HN58V1001 Series Write/Erase Endurance and Data Retention Time 4 The endurance is 10 cycles in case of the page programming and 10 (1% cumulative failure rate). The data retention time is more than 10 years when a device is page- ...
Page 18
HN58V1001 Series 2. Data Protection at V On/Off CC When V is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may act trigger and turn the EEPROM to program mode ...
Page 19
HN58V1001 Series 3. Software data protection To prevent unintentional programming, this device has the software data protection (SDP) mode. The SDP is enabled by inputting the following 3 bytes code and write data. SDP is not enabled if only the ...
Page 20
... HN58V1001 Series Package Dimensions HN58V1001FP Series (FP-32D, FP-32DV) 20.45 20.95 Max 32 1 1.00 Max 1.27 *0.40 ± 0.08 0.15 0.38 ± 0.06 *Dimension including the plating thickness Base material dimension Rev.8.00, Nov. 28. 2003, page 14.14 ± 0.30 0.10 M Package Code JEDEC JEITA Mass (reference value) Unit: mm 1.42 0 ˚ – 8 ˚ 0.80 ± 0.20 ...
Page 21
HN58V1001 Series Package Dimensions (cont.) HN58V1001T Series (TFP-32DA, TFP-32DAV) 8.00 8.20 Max 0.50 *0.22 ± 0.08 0.08 0.20 ± 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension Rev.8.00, Nov. 28. 2003, page ...
Page 22
Revision History Rev. Date Contents of Modification Page Description 0.0 Jul. 11. 1991 Initial issue 1.0 Jan. 30. 1992 HN58V1001P/FP/T/R-20 to HN58V1001P/FP/T/R-25 Low power dissipation 100 W max (standby) to 110 W max (standby) Pin Description 3 V Recommended DC ...
Page 23
... Package Dimensions Change of FP-32D, TFP-32DA 7.0 Oct. 31. 1997 8 Timing Waveforms Read Timing Waveform: Correct error 8.00 Nov. 28. 2003 Change format issued by Renesas Technology Corp. 2 Ordering Information Deletion of HN58V1001P-25 Addition of HN58V1001FP-25E, HN58V1001T-25E 20-21 Package Dimensions Deletion of DP-32 FP-32D to FP-32D, FP-32DV TFP-32DA to TFP-32DA, TFP-32DAV min: 250 ns DW ...
Page 24
Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...