FM200TU-2A_09 MITSUBISHI [Mitsubishi Electric Semiconductor], FM200TU-2A_09 Datasheet

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FM200TU-2A_09

Manufacturer Part Number
FM200TU-2A_09
Description
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
Manufacturer
MITSUBISHI [Mitsubishi Electric Semiconductor]
Datasheet
APPLICATION
AC motor control of forklift (battery power source), UPS
OUTLINE DRAWING & CIRCUIT DIAGRAM
FM200TU-2A
CIRCUIT DIAGRAM
(7)G
(1)S
(4)S
(10)G
P
N
U
U
U
P
P
N
U
N
U
MOUNTING HOLES
(8)G
(2)S
(5)S
(11)G
V
V
V
N
P
P
V
N
V
4- φ6.5
7-M6NUTS
6.5
(9)G
(6)S
(3)S
(12)G
W
W
W
A
P
P
W
N
N
15.2
16.5
16.5
W
12
7
10
7
3
14
20
(15.8)
6.5
16
36
30
U
1
6
32
P
(13)
(14)
97
110
32
70.9
14
20
±0.25
N
V
10
7
32
16
36
30
B
(1)S
(7)G
(13)TH1
13
14
14
20
3
(8.7)
U
U
W
P
P
(2)S
(8)G
(14)TH2
I
V
Insulated Type
6-elements in a pack
NTC Thermistor inside
UL Recognized
D(rms) ..........................................................
DSS .............................................................
V
V
P
P
(3)S
(9)G
MITSUBISHI <MOSFET MODULE>
Housing Type of A and B
(Tyco Electronics P/N:)
A: 917353-1
B: 179838-1
HIGH POWER SWITCHING USE
W
W
Yellow Card No.E80276
Tc measured point
FM200TU-2A
P
P
(4)S
(10)G
U
N
U
INSULATED PACKAGE
N
File No.E80271
(SCREWING DEPTH)
(5)S
(11)G
V
35
N
14
V
26
±1.0
N
+1.0
−0.5
(6)S
(12)G
Dimensions in mm
W
W
N
N
A
B
Feb. 2009
100A
100V

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FM200TU-2A_09 Summary of contents

Page 1

... B Housing Type of A and B (Tyco Electronics P/N:) A: 917353-1 B: 179838-1 (13) (1)S P (2 (7)G P (8 (13)TH1 (14)TH2 (14) FM200TU-2A INSULATED PACKAGE 100A 100V Yellow Card No.E80276 File No.E80271 Dimensions ±1.0 +1.0 26 −0.5 14 (SCREWING DEPTH) Tc measured point P (4)S N (5 (10)G N (11)G ...

Page 2

... Case to heat sink, Thermal grease Applied* Conditions 25° Resistance 25°C, 50° th(f- [°C]+273.15 = 298.15 [ [°C]+273.15 = 323.15 [ FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE Ratings 100 ±20 100 200 100 100 200 410 560 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3 ...

Page 3

... Chip = 12V 15V GS 100 120 140 160 (°C) ch Chip I = 200A 100A ( FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE TRANSFER CHARACTERISTICS (TYPICAL) Chip 200 V = 10V DS 150 T = 25° 125° 100 GATE-SOURCE VOLTAGE V ...

Page 4

... GATE RESISTANCE R HALF-BRIDGE SWITCHING CHARACTERISTICS – – GATE RESISTANCE R 4 FM200TU-2A INSULATED PACKAGE (TYPICAL) Chip T = 125° 25° 0.7 0.8 0.9 1.0 (V) SD (TYPICAL) t d(off) t d(on Conditions 48V DD = ±15V V GS ...

Page 5

... S (110) (97) 90 TrVP TrWP 14 TrVN T rWN 91.6 5 FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS –3 –2 – ...

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