AS7C1025A ALSC [Alliance Semiconductor Corporation], AS7C1025A Datasheet - Page 6

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AS7C1025A

Manufacturer Part Number
AS7C1025A
Description
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)
Manufacturer
ALSC [Alliance Semiconductor Corporation]
Datasheet
Data retention characteristics (over the operating range)
Data retention waveform
AC test conditions
Notes
1
2
3
4
5
6
7
8
9
10 CE or WE must be High during address transitions. Either CE or WE asserting high terminates a write cycle.
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 NA.
13 C=30pF, except all high Z and low Z parameters, where C=5pF.
V
Data retention current
Chip enable to data retention time
Operation recovery time
Input leakage current
2/6/01; V.0.9
CC
During V
This parameter is sampled, but not 100% tested.
For test conditions, see AC Test Conditions, Figures A, B, and C.
t
This parameter is guaranteed, but not 100% tested.
WE is High for read cycle.
CE and OE are Low for read cycle.
Address valid prior to or coincident with CE transition Low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
CLZ
– Output load: see Figure B or Figure C.
– Input pulse level: GND to 3.0V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5V.
V
for data retention
CE
CC
and t
+3.0V
GND
CC
CHZ
power-up, a pull-up resistor to V
are specified with CL = 5pF, as in Figure C. Transition is measured 500mV from steady-state voltage.
10%
Parameter
Figure A: Input pulse
90%
2 ns
90%
10%
CC
V
V
IH
on CE is required to meet I
CC
Alliance Semiconductor
t
CDR
D
Symbol
I
OUT
Figure B: 5V Output load
t
V
CCDR
CDR
I
t
DR
LI
R
255W
Data retention mode
V
SB
DR
V
specification.
V
+5V
480W
C(14)
GND
IN
CE
Test conditions
DR
2.0V
V
V
®
CC
IN
V
V
CC
CC
= 2.0V
– 0.2V or
0.2V
– 0.2V
D
D
OUT
OUT
Thevenin equivalent:
255W
Figure C: 3.3V Output load
168W
V
V
CC
Min
IH
2.0
t
RC
0
t
+1.728V (5V and 3.3V)
R
+3.3V
320W
C(14)
GND
Max
500
AS7C31025A
1
AS7C1025A
P. 6 of 8
Unit
µA
µA
ns
ns
V

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