MF1011B900 Philipss, MF1011B900 Datasheet - Page 5
![no-image](/images/no-image-200.jpg)
MF1011B900
Manufacturer Part Number
MF1011B900
Description
Microwave power transistor
Manufacturer
Philipss
Datasheet
1.MF1011B900.pdf
(12 pages)
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Philips Semiconductors
1997 Feb 18
handbook, full pagewidth
Microwave power transistor
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity:
r
= 10.
input
40
18.5
0.64
L2
30
L1
20.0
4.0
Fig.3 Broadband test circuit.
C6
7.5
5.0
C4
5
21.0
7.5
1.6
C7
C2
4.0
10.5
30
10.0
R/L3
0.64
V CC
1.0
C1
C5
C3
MLC720
5.9
MF1011B900Y
output
40
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