LM9061N National Semiconductor, LM9061N Datasheet

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LM9061N

Manufacturer Part Number
LM9061N
Description
Power MOSFET Driver with Lossless Protection
Manufacturer
National Semiconductor
Datasheet
C 1995 National Semiconductor Corporation
LM9061
Power MOSFET Driver with Lossless Protection
General Description
The LM9061 is a charge-pump device which provides the
gate drive to any size external power MOSFET configured
as a high side driver or switch A CMOS logic compatible
ON OFF input controls the output gate drive voltage In the
ON state the charge pump voltage which is well above the
available V
MOSFET A built-in 15V zener clamps the maximum gate to
source voltage of the MOSFET When commanded OFF a
110
the MOSFET for a gradual turn-OFF characteristic to mini-
mize the duration of inductive load transient voltages and
further protect the power MOSFET
Lossless protection of the power MOSFET is a key feature
of the LM9061 The voltage drop (V
device is continually monitored and compared against an
externally programmable threshold voltage A small current
sensing resistor in series with the load which causes a loss
of available energy is not required for the protection circuit-
ry Should the V
exceed the threshold voltage the output is latched OFF in a
more gradual fashion (through a 10 A output current sink)
after a programmable delay time interval
Designed for the automotive application environment the
LM9061 has a wide operating temperature range of
to
can withstand 60V power supply transients The LM9061 is
available in an 8-pin small outline package and an 8-pin
dual in-line package
Typical Application
a
125 C remains operational with V
A current sink discharges the gate capacitances of
CC
supply is directly applied to the gate of the
DS
voltage due to excessive load current
TL H 12317
DS
) across the power
CC
up to 26V and
b
40 C
TL H 12317 – 1
Features
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Applications
Y
Y
Y
Y
Y
Built-in charge pump for gate overdrive of high side
drive applications
Lossless protection of the power MOSFET
Programmable MOSFET protection voltage
Programmable delay of protection latch-OFF
Fast turn-ON (1 5 ms max with gate capacitance of
25000 pF)
Undervoltage shut OFF with V
Overvoltage shut OFF with V
Withstands 60V supply transients
CMOS logic compatible ON OFF control input
Surface mount and dual in-line packages available
Valve relay and solenoid drivers
Lamp drivers
DC motor PWM drivers
Logic controlled power supply distribution switch
Electronic circuit breaker
Connection Diagrams
See NS Package Number M08A
See NS Package Number N08E
Order Number LM9061M
Order Number LM9061N
CC l
Top View
Top View
CC k
26V
7V
RRD-B30M115 Printed in U S A
TL H 12317 – 3
TL H 12317 – 2
April 1995

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LM9061N Summary of contents

Page 1

... 26V and Connection Diagrams See NS Package Number M08A TL H 12317 – 1 See NS Package Number N08E April 1995 26V 12317 – 3 Top View Order Number LM9061M TL H 12317 – 2 Top View Order Number LM9061N RRD-B30M115 Printed ...

Page 2

... Discharge Transistor Saturation Voltage SAT Operating Ratings (Note 1) Supply Voltage ON OFF Input Voltage Ambient Temperature Range 60V Thermal Resistance ( 20 mA LM9061M V 15V a CC LM9061N 25V to 60V 150 150 C b 260 C T 125 C unless otherwise specified ...

Page 3

AC Timing Characteristics 7V V 20V REF specified Symbol Parameter T Output Turn-ON Time ON T Output Turn-OFF Time OFF(Normal) Normal Operation (Note 4) T Output Turn-OFF Time OFF(Latch-OFF) ...

Page 4

Typical Operating Waveforms 12317– 5 ...

Page 5

Typical Electrical Characteristics Standby Supply Current Output Sink Current vs Temperature Reference Voltage vs Temperature Operating Supply Current Output Voltage Output Sink Current Output Source Current vs Temperature vs Output Voltage Delay ...

Page 6

Typical Electrical Characteristics Application Hints BASIC OPERATION The LM9061 contains a charge pump circuit that generates a voltage in excess of the applied supply voltage to provide gate drive voltage to power MOSFET transistors Any size of N-channel power MOSFET ...

Page 7

Application Hints (Continued) TURN ON AND TURN OFF CHARACTERISTICS The actual rate of change of the voltage applied to the gate of the power device is directly dependent on the input ca- pacitances of the MOSFET used These times are ...

Page 8

Application Hints (Continued) To protect the MOSFET from exceeding its maximum junc- tion temperature rating the power dissipation needs to be limited The maximum power dissipation allowed (derated for temperature) and the maximum drain to source ON re- sistance R ...

Page 9

Application Hints (Continued) a manner that there is virtually no current flowing into the non-inverting input of the comparator Therefore only I flows through resistor R All of the input bias THRESHOLD current 20 A maximum for the comparator input ...

Page 10

Application Hints (Continued) To prevent this situation a delay capacitor is required at pin 8 The selection of a minimum capacitor value to ensure proper start-up depends primarily on the load characteristics and how much time is required for the ...

Page 11

Application Hints (Continued) manufacturer for all of the MOSFETs in the array Also all MOSFETs should have the same style heat sink or ideally all mounted on the same heat sink The electrical connec- tion of the MOSFETs should get ...

Page 12

... Gate is charged at an exponential rate set by the added external Gate resistor and the MOSFET Gate capacitances Although the LM9061 will drive MOSFETs from any manu- facturer National Semiconductor offers a wide range of power MOSFETs Figure 9 shows a small sample of the devices available TL H 12317 – ...

Page 13

Physical Dimensions inches (millimeters) Order Number LM9061M NS Package Number M08A 13 ...

Page 14

... Italiano National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications Order Number LM9061N NS Package Number N08E 2 A critical component is any component of a life ...

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