NCN6010D ON, NCN6010D Datasheet - Page 12

• Manufacturer Part Number: NCN6010D
• Description: SIM Card Supply and Level Shifter
• Manufacturer: ON

series with the pure capacitor, the tantalum or the electrolytic
type will generate high voltage spikes and poor regulation in
the high frequency operating charge pump built into the
NCN6010. Moreover, with ESR in the 3.0 Ohm range, low
cost capacitors are not suitable for this application.
charge pump circuit. Although this schematic does not
V1 = 0
V2 = 3
TD = 10 ns
TR = 10 ns
TF = 10 ns
PW = 600 ns
PER = 1200 ns
It is clear that, with nearly half an ohm of resistance is
Figure 11 provides the schematic diagram of the simulated
Battery Pack
+
–
V2
+
–
1
74HC14
U2A
V1
275 V
2
Figure 11. Charge Pump Simulation Schematic Diagram
0.5 R
R3
2
1
2
74HC14
74HC08
U3A
U1A
if (V (%IN+, %IN–) > 80 mV, 5, 0)
+
1
C1
4.7 F
R1
0.1 R
3
IC = 0
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NCN6010
OUT+ IN+
OUT– IN–
EVALUE
S
V
V
S
V
V
12
OFF
ON
OFF
ON
E5
+
–
+
–
= 1.0 V
= 0.0 V
S1
S2
= 0.0 V
= 2.0 V
represent the accurate internal structure of the NCN6010, it
can be used for engineering purpose. The ABM devices S1,
S2, S4 and S5 have been defined in the PSPICE model to
represent the NMOS and PMOS used in the silicon. The
ESR value of C2 and C3 can be adjusted, at PSPICE level,
to cope with any type of external capacitors and are useful
to double check the behavior of the system as a function of
the external passives components.
+
–
+
–
+
–
220 nF
C3
Transfer Capacitor
V3
5.0 V
R5
500 R
0.05 R
R4
C2
1 F
R2
0.1 R
S
V
V
S
V
V
OFF
ON
ON
OFF
+
–
+
–
= 0.0 V
= 1.0 V
S4
S5
= 2.0 V
= 0.0 V
+
–
+
–