ADG506A Analog Devices, ADG506A Datasheet - Page 2

• Manufacturer Part Number: ADG506A
• Description: CMOS 8-/16-Channel Analog Multiplexers
• Manufacturer: Analog Devices

ADG506A/ADG507A–SPECIFICATIONS
Parameter
ANALOG SWITCH
DIGITAL CONTROL
DYNAMIC CHARACTERISTICS
POWER SUPPLY
NOTES
1
Specifications subject to change without notice.
Dual Supply
Sample tested at +25 C to ensure compliance.
Analog Signal Range
R
R
R
I
I
I
I
V
V
I
C
t
t
t
t
OFF Isolation
C
C
Q
I
I
Power Dissipation
DIFF
TRANSITION
OPEN
ON
OFF
S
D
D
INL
DD
SS
ON
ON
ON
INH
INL
IN
S
D
INJ
(OFF), Off Input Leakage
(OFF), Off Output Leakage
ADG506A
ADG507A
(ON), On Channel Leakage
ADG506A
ADG507A
Leakage (ADG507A Only)
ADG506A
ADG507A
(OFF)
(OFF)
(EN)
, Charge Injection
or I
Digital Input Capacitance
, Differential Off Output
, Input Low Voltage
Drift
Match
, Input High Voltage
(EN)
1
INH
1
1
1
(V
DD
= +10.8 V to +16.5 V, V
+25 C
V
V
280
450
300
0.6
5
0.02
1
0.04
1
1
0.04
1
1
8
200
300
50
25
200
300
200
300
68
50
5
44
22
4
0.6
20
10
SS
DD
ADG506A
ADG507A
K Version
–40 C to
+85 C
V
V
600
400
50
200
100
200
100
25
2.4
0.8
1
400
10
400
400
1.5
0.2
28
SS
DD
SS
= –10.8 V to –16.5 V unless otherwise noted)
+25 C
V
V
280
450
300
0.6
5
0.02
1
0.04
1
1
0.04
1
1
8
200
300
50
25
200
300
200
300
68
50
5
44
22
4
0.6
20
10
SS
DD
ADG506A
ADG507A
B Version
200
100
200
100
400
10
400
400
1.5
0.2
28
–40 C to
+85 C
V
V
600
400
50
25
2.4
0.8
1
SS
DD
–2–
+25 C +125 C
V
V
280
450
300
0.6
5
0.02
1
0.04
1
1
0.04
1
1
8
200
300
50
25
200
300
200
300
68
50
5
44
22
4
0.6
20
10
SS
DD
ADG506A
ADG507A
T Version
–55 C to
V
V
600
400
50
200
100
200
100
25
2.4
0.8
1
400
10
400
400
1.5
0.2
28
SS
DD
Units
V min
V max
%/ C typ –10 V
% typ
nA typ
nA max
nA typ
nA max
nA max
nA typ
nA max
nA max
nA max
V min
V max
pF max
ns typ
ns max
ns typ
ns min
ns typ
ns max
ns typ
ns max
dB typ
dB min
pF typ
pF typ
pF typ
pC typ
mA typ
mA max
mA max
mW typ
mW max
A max
A typ
typ
max
max
max
Comments
–10 V V
V
V
–10 V
V1 = 10 V, V2 =
V1 = 10 V, V2 =
V1 = 10 V, V2 =
V1 = 10 V, V2 =
V
V1 = 10 V, V2 = +10 V; Test Circuit 6
Test Circuit 7
Test Circuit 8
Test Circuit 8
V
V
V
V
R
V
V
DD
DD
IN
EN
S
EN
EN
S
IN
IN
= 7 V rms, f = 100 kHz
= 0 , V
= 0 to V
= V
= V
= 0.8 V, R
= 0.8 V
= 0.8 V
= 15 V ( 10%), V
= 15 V ( 5%), V
INL
IN
V
V
S
S
S
or V
or V
S
DD
+10 V, I
+10 V, I
+10 V, I
= 0 V; Test Circuit 9
INH
L
lNH
= 1 k , C
10 V; Test Circuit 2
10 V; Test Circuit 3
10 V; Test Circuit 4
10 V; Test Circuit 5
DS
SS
DS
DS
SS
= 1 mA; Test Circuit 1
= –15 V ( 5%)
= 1 mA
= 1 mA
= –15 V ( 10%)
L
= 15 pF,
REV. C