LM611MN National Semiconductor, LM611MN Datasheet - Page 4
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LM611MN
Manufacturer Part Number
LM611MN
Description
Operational Amplifier and Adjustable Reference
Manufacturer
National Semiconductor
Datasheet
1.LM611MN.pdf
(17 pages)
www.national.com
VOLTAGE REFERENCE
I
e
FB
These specifications apply for V
unless otherwise specified. Limits in standard typeface are for T
Temperature Range.
n
Electrical Characteristics
Symbol
Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the de-
vice beyond its rated operating conditions.
Note 2: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below
V
and unpredictable when any parasitic diode or transistor is conducting.
Note 3: Junction temperature may be calculated using T
soldered to copper-clad board with dissipation from one op amp or reference output transistor, nominal
age.
Note 4: Human body model, 100 pF discharged through a 1.5 k
Note 5: Typical values in standard typeface are for T
most likely parametric norm.
Note 6: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold face type).
Note 7: Slew rate is measured with op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V, and the output voltage
transition is sampled at 10V and 20V. For falling slew rate, the input voltage is driven from 25V to 5V, and output voltage transition is sampled at 20V and 10V.
Note 8: V
Note 9: Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is
10
is guaranteed by design and sample testing.
Note 10: Hysteresis is the change in V
hysteresis to the typical value, its junction temperature should be cycled in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C.
Note 11: Low contact resistance is required for accurate measurement.
Note 12: Military RETS 611AMX electrical test specification is available on request. The LM611AMJ/883 can also be procured as a Standard Military Drawing.
Simplified Schematic Diagrams
−
, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined
6
• V
R
/(V
R
R[25˚C]
is the cathode-feedback voltage, nominally 1.244V.
V
V
FEEDBACK Bias
Current
V
• T
R
ANODE
R
Change with
Noise
J
), where V
Parameter
Change
R
is the lowest value subtracted from the highest, V
R
−
caused by a change in T
= GND = 0V, V
V
(
(
I
10 Hz to 10,000 Hz, V
FB
@
@
+
; V
V
V
= V
J
ANODE
ANODE
= 25˚C; values in boldface type apply for the full operating temperature range. These values represent the
(Continued)
ANODE
J
+
= T
max, V
A
+
+ P
= V
= V
Conditions
= 5V, V
D JA
J
, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the
resistor.
V
−
+
FB
R
− 1.0V)
= GND) − V
. The given thermal resistance is worst-case for packages in sockets in still air. For packages
= V
CM
Op Amp
5.06V
RO
R
= V
4
J
= V
= 25˚C; limits in boldface type apply over the Operating
OUT
R[25˚C]
R
R
= 2.5V, I
is the value at 25˚C, and T
(Note 5)
Typical
R
0.7
3.3
22
29
30
JA
= 100 µA, FEEDBACK pin shorted to GND,
is 90˚C/W for the N package and 135˚C/W for the M pack-
LM611AM
LM611AI
DS009221-3
(Note 6)
Limits
1.5
3.0
35
40
J
is the temperature range. This parameter
LM611BI
LM611M
LM611C
(Note 6)
LM611I
Limits
1.6
3.0
50
55
mV max
mV max
nA max
nA max
µV
Units
RMS