CGY121 Siemens Semiconductor Group, CGY121 Datasheet

no-image

CGY121

Manufacturer Part Number
CGY121
Description
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB)
Manufacturer
Siemens Semiconductor Group
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CGY121B
Manufacturer:
ZETEX
Quantity:
150 000
Semiconductor Group
Semiconductor Group
GaAs MMIC
Preliminary Datasheet
l Variable gain amplifier
l Typical Gain Control range over 50dB
l Positive Control Voltage
l 50
l Low power consumption
l Operating voltage range: 2.7 to 6 V
l Frequency range 800 MHz ... 2.5 GHz
ESD: Electrostatic discharge sensitive device,
Maximum ratings
Characteristics
Drain voltage
Neg. supply voltage
Pos. control voltage
Channel temperature
Storage temperature range
Total power dissipation (TS < 81°C) 2)
Thermal resistance
Characteristics
Channel-soldering point (GND)
1)
2)
*)
Siemens Aktiengesellschaft
Pin-out changed compared to CGY120: 180° rotation
Dimensions see page 9.
Please care for sufficient heat dissipation on the pcb!
(MMIC-Amplifier) for mobile communication
CGY 121 A
observe handling precautions!
input and output matched
Type
Marking
Y9S
1
1
1
Symbol
Symbol
R thChS
Q-62702-G66
Vcon
Ordering code
T stg
T Ch
P tot
V G
V D
(taped)
Vcontrol
max. Value
max. Value
-55...+150
6
150
550
125
-8
RF-GND
8
4
5
RF-in; -Vg
Vd2; RF-out
4
Package
CGY 121 A
MW-6
HL HF PE GaAs1
1
RF-GND
Unit
Unit
K/W
mW
°C
°C
2
1998-11-01
1998-11-01
V
V
V
1)
23.06.98
3
Vd1

Related parts for CGY121

CGY121 Summary of contents

Page 1

GaAs MMIC Preliminary Datasheet l Variable gain amplifier (MMIC-Amplifier) for mobile communication l Typical Gain Control range over 50dB l Positive Control Voltage l 50 input and output matched l Low power consumption l Operating voltage range: 2 ...

Page 2

Functional block diagram: Pin / -VG(4) Vcon (6) Pin # Name Configuration 1 Drain voltage 2nd stage / RF-0utput VD2 / Pout 2 RF-Gnd 3 Drain voltage 1st stage VD1 4 Negative voltage at current control circuit (-4V) / RF-Input ...

Page 3

Electrical characteristics ( 25° 900 MHz -4V Characteristics Power Gain Vd=3V; I=45mA; Vcon=3V Input return loss Vd=3V; I=45mA; Vcon=3V Output return loss Vd=3V; I=45mA; Vcon=3V Gain Control Range ...

Page 4

... Application Circuit f = 900 MHz Vd Input 50 Ohm C1 Siemens Aktiengesellschaft Semiconductor Group Semiconductor Group CGY121 6 2 Vcontrol GND CGY 121 A C4 Output 50 Ohm C2 23.06. GaAs1 1998-11-01 1998-11-01 ...

Page 5

... R1 (Siemens B 54102-A1271-J60) R2 (Siemens B 54102-A1120-J60) R3 Application Circuit f = 1900 MHz Vd Input 50 Ohm C1 Siemens Aktiengesellschaft Semiconductor Group Semiconductor Group 900 MHz 270 Ohm 6.8 Ohm CGY121 6 2 GND CGY 121 0603 100 nF 0603 47 nF 0603 15 nH 0805 27 nH 0805 ...

Page 6

Parts List Frequency C1, C2 (Siemens size 0603) C3, C4 (Siemens size 0603) C5 (Siemens size 0603) C6 (Siemens size 0603) L1 (Coilcraft 0805CS-150XKBC) R1 (Siemens B 54102-A1271-J60) R2 (Siemens B 54102-A1120-J60) R3 Siemens Aktiengesellschaft Semiconductor Group Semiconductor Group 1900 ...

Page 7

Gain vs. Vcontrol Operating Conditions : Vd=3V, Vg=-4V 1.9GHz, Pin=-10dBm -10 -20 -30 -40 0 Total Power Dissipation Ptot = f(Ts) 700 600 P totmax 500 400 300 200 100 Siemens ...

Page 8

Semiconductor Device Outline MW-6 Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstraße 73, D-81541 München. copyright Siemens AG 1997. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components ...

Related keywords