NE57811S Philipss, NE57811S Datasheet
NE57811S
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NE57811S Summary of contents
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NE57811 Advanced DDR memory termination power with shutdown Product data Supersedes data of 2002 Jul 16 INTEGRATED CIRCUITS 2003 Apr 02 ...
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Philips Semiconductors Advanced DDR memory termination power with shutdown DESCRIPTION The NE57811 is designed to provide power for termination of a Double Data Rate (DDR) SDRAM memory bus. It significantly reduces parts count, board space, and overall system cost compared ...
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... ORDERING INFORMATION PACKAGE TYPE NUMBER TYPE NUMBER NAME DESCRIPTION NE57811S SPAK-5 plastic single-ended surface mounted package; 5 leads Part number marking The package is marked with the part number under the logo. The second line indicates wafer lot number. The first four characters of the third line contain a date code ...
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Philips Semiconductors Advanced DDR memory termination power with shutdown ELECTRICAL CHARACTERISTICS + 2 –3 +3.5 A, unless otherwise specified. amb DD TT SYMBOL PARAMETER V Output voltage ...
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Philips Semiconductors Advanced DDR memory termination power with shutdown TYPICAL PERFORMANCE CURVES Figure 3. V transient response TT (output filter 50 F ceramic) 1.300 1.290 1.280 1.270 1.260 1.250 1.240 1.230 1.220 1.210 1.200 –6 –5 –4 Figure 5. Typical ...
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Philips Semiconductors Advanced DDR memory termination power with shutdown TECHNICAL DISCUSSION The NE57811 supplies power to the DDR memory bus termination 1 resistors at nominally / the voltage supplied to the memory ICs or 2 DIMMs. DDR memory output drivers ...
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Philips Semiconductors Advanced DDR memory termination power with shutdown THERMAL DESIGN Designing the proper thermal system for the NE57811 is important to its reliable operation. The NE57811 will be operating at an average power level less than the maximum rating ...
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Philips Semiconductors Advanced DDR memory termination power with shutdown APPLICATION INFORMATION The NE57811 can be used in a variety of DDR memory configurations. Its small footprint, fast transient response and lessened need for large bulk output capacitance, makes it highly ...
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Philips Semiconductors Advanced DDR memory termination power with shutdown TEST CIRCUITS 820 F OSCON 0 2 2003 Apr NE57811 ea) ...
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Philips Semiconductors Advanced DDR memory termination power with shutdown PACKING METHOD The NE57811 is packed in reels, as shown in Figure 13. GUARD TAPE BAND BARCODE LABEL BOX 2003 Apr 02 REEL ASSEMBLY Figure 13. Tape and reel packing method. ...
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Philips Semiconductors Advanced DDR memory termination power with shutdown Plastic single-ended surface mounted package; 5 leads 2003 Apr 02 11 Product data NE57811 SOT756 ...
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Philips Semiconductors Advanced DDR memory termination power with shutdown REVISION HISTORY Rev Date Description _2 20030402 Product data (9397 750 11216). ECN 853-2360 29724 of 28 March 2003. Supersedes data of 2002 Jul 16. Modifications: Page 4, Electrical characteristics table: ...
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Philips Semiconductors Advanced DDR memory termination power with shutdown Data sheet status Product [1] Level Data sheet status [2] [3] status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued ...