AT28C010-20JC ATMEL Corporation, AT28C010-20JC Datasheet

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AT28C010-20JC

Manufacturer Part Number
AT28C010-20JC
Description
1 Megabit 128K x 8 Paged CMOS E2PROM
Manufacturer
ATMEL Corporation
Datasheet

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AT28C010-20JC
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Part Number:
AT28C010-20JC
Manufacturer:
ATMEL
Quantity:
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Pin Configurations
Features
Description
The AT28C010 is a high-performance Electrically Erasable and Programmable Read
Only Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 120 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 200 A.
Pin Name
A0 - A16
CE
OE
WE
I/O0 - I/O7
NC
DC
Fast Read Access Time - 120 ns
Automatic Page Write Operation
Fast Write Cycle Time
Low Power Dissipation
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Single 5V
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
Commercial and Industrial Temperature Ranges
Internal Address and Data Latches for 128-Bytes
Internal Control Timer
Page Write Cycle Time - 10 ms Maximum
1 to 128-Byte Page Write Operation
40 mA Active Current
200 A CMOS Standby Current
Endurance: 10
Data Retention: 10 Years
Top View
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data
Inputs/Outputs
No Connect
Don’t Connect
10% Supply
PDIP
4
or 10
5
Cycles
Note:
is a DON’T CONNECT.
Top View
PLCC package pin 1
TSOP
Top View
PLCC
(continued)
AT28C010 Com/Ind
AT28C010 Com/Ind
1 Megabit
(128K x 8)
Paged
CMOS
E
Commercial
and
Industrial
2
PROM
2-231
0353C

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AT28C010-20JC Summary of contents

Page 1

... JEDEC Approved Byte-Wide Pinout Commercial and Industrial Temperature Ranges Description The AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 mW. When the device is deselected, the CMOS standby current is less than 200 A ...

Page 2

... Description (Continued) The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writ- ing 128-bytes simultaneously. During a write cy- cle, the address and 1 to 128-bytes of data are internally latched, freeing the address and data bus for other opera- tions ...

Page 3

... It should be noted, that once protected the host may still perform a byte or page write to the AT28C010. This is done by pre- ceding the data to be written by the same 3-byte command sequence used to enable SDP. Once set, SDP will remain active unless the disable com- mand sequence is issued ...

Page 4

... Output Low Voltage OL V Output High Voltage OH1 V Output High Voltage CMOS OH2 AT28C010 Com/Ind 2-234 OPTIONAL CHIP ERASE MODE: The entire device can be erased using a 6-byte software code. Please see Soft- ware Chip Erase application note for details. 0.5V and using ad- AT28C010-12 AT28C010-15 0° ...

Page 5

... ACC after the falling 4. This parameter is characterized and is not 100% tested ACC OE . ACC Output Test Load (1) Typ Max AT28C010 Com/Ind AT28C010-15 AT28C010-20 Min Max Min Max 150 200 150 200 Units ...

Page 6

... AH t Chip Select Set-up Time CS t Chip Select Hold Time CH t Write Pulse Width ( Data Set-up Time Data, OE Hold Time DH OEH AC Write Waveforms WE Controlled CE Controlled AT28C010 Com/Ind 2-236 Min Max 100 50 0 Units ...

Page 7

... Notes through A16 must specify the page address during each high to low transition of WE (or CE must be high only when WE and CE are both low. Chip Erase Waveforms sec (min msec (min 12.0V 0.5V H Min 100 50 (1, 2) AT28C010 Com/Ind Max Units 150 s ns 2-237 ...

Page 8

... After the command sequence has been issued and a page write operation follows, the page address inputs (A7 - A16) must be the same for each high to low transition of WE (or CE). AT28C010 Com/Ind 2-238 Software Data (1) Protection Disable Algorithm ...

Page 9

... Beginning and ending state of I/O6 will vary. (1) Min See AC Read Characteristics. (1) Min 10 10 (2) 150 0 2. See AC Read Characteristics. 3. Any address location may be used but the address should not vary. AT28C010 Com/Ind Typ Max Typ Max Units Units 2-239 ...

Page 10

... The following table lists standard Atmel products that can be ordered. Device Numbers Speed AT28C010 12 AT28C010E 12 AT28C010 15 AT28C010E 15 AT28C010 20 AT28C010E 20 AT28C010 - AT28C010 Com/Ind 2-240 Ordering Code Package AT28C010(E)-12JC 32J AT28C010(E)-12PC 32P6 AT28C010(E)-12TC 32T AT28C010(E)-12JI 32J AT28C010(E)-12PI 32P6 AT28C010(E)-12TI 32T AT28C010(E)-15JC ...

Page 11

... Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP) 32T 32 Lead, Plastic Thin Small Outline Package (TSOP) W DIE Blank Standard Device: Endurance = 10K Write Cycles; Write Time = High Endurance Option: Endurance = 100K Write Cycles AT28C010 Com/Ind Package Type Options 2-241 ...

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