IS42S16100 Integrated Silicon Solution, IS42S16100 Datasheet - Page 4

• Manufacturer Part Number: IS42S16100
• Description: 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM
• Manufacturer: Integrated Silicon Solution

IS42S16100
ABSOLUTE MAXIMUM RATINGS
DC RECOMMENDED OPERATING CONDITIONS
CAPACITANCE CHARACTERISTICS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
2. All voltages are referenced to GND.
3. V
4
V
Symbol
V
V
V
V
P
I
T
T
Symbol
C
C
CI/O
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
CS
Symbol
CC
OPR
STG
IH
CC MAX
CCQ MAX
IN
OUT
D MAX
IN
IN
1
2
(max) = V
, V
V
V
IH
IL
CC
Q
CCQ
Parameter
Input Capacitance: A0-A11
Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM)
Data Input/Output Capacitance: I/O0-I/O15
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
+ 2.0V with a pulse width ≤ 3 ns.
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
(4)
(3)
(1)
Min.
(1,2)
-0.3
3.0
2.0
(At T
A
= 0 to +25°C, Vcc = VccQ = 3.3 ± 0.3V, f = 1 MHz)
Typ.
3.3
Com
Ind.
—
—
(2)
(
Integrated Silicon Solution, Inc. — 1-800-379-4774
At T
V
DD
Max.
+0.8
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
–55 to +150
A
3.6
-40 to +85
+ 0.3
0 to +70
= 0 to +70°C)
Rating
50
1
Unit
V
V
V
Unit
mA
°C
°C
°C
W
Typ.
V
V
V
V
—
—
—
Max.
4
4
5
ISSI
Unit
pF
pF
pF
11/01/01
Rev. C
®