TZA3023U Philips Semiconductors, TZA3023U Datasheet - Page 18

• Manufacturer Part Number: TZA3023U
• Description: SDH/SONET STM4/OC12 transimpedance amplifier
• Manufacturer: Philips Semiconductors

Philips Semiconductors
BONDING PAD LOCATIONS
Note
1. All coordinates are referenced, in m, to the bottom
Physical characteristics of the bare die
2000 Mar 29
DREF
GND
GND
IPhoto
GND
GND
GND
GND
OUT
OUTQ
V
V
AGC
Glass passivation
Bonding pad dimension
Metallization
Thickness
Size
Backing
Attach temperature
Attach time
SYMBOL
CC
CC
SDH/SONET STM4/OC12
transimpedance amplifier
left-hand corner of the die.
PARAMETER
PAD
10
11
12
13
1
2
3
4
5
6
7
8
9
2.1 m PSG (PhosphoSilicate Glass) on top of 0.65 m oxynitride
minimum dimension of exposed metallization is 90
1.22 m W/AlCu/TiW
380 m nominal
1.03
silicon; electrically connected to GND potential through substrate contacts
<440 C; recommended die attach is glue
<15 s
COORDINATES
215
360
549
691
785
785
567
424
259
95
95
95
95
x
1.30 mm (1.34 mm
1055
1055
1055
881
618
473
285
501
641
95
95
95
95
y
(1)
2
)
18
1300
Fig.22 Bonding pad locations of the TZA3023U.
m
IPhoto
DREF
x
GND
GND
VALUE
0
y
0
2
4
1
3
5
13
90 m (pad size = 100
TZA3023U
6
12
1030
m
7
11
Product specification
8
10
TZA3023
9
100 m)
OUTQ
OUT
MCD897