IR51HD214 International Rectifier, IR51HD214 Datasheet - Page 3

• Manufacturer Part Number: IR51HD214
• Description: SELF-OSCILLATING HALF-BRIDGE
• Manufacturer: International Rectifier

Symbol
Symbol
Dynamic Electrical Characteristics
V
Static Electrical Characteristics
V
Supply Characteristics
V
V
I
V
Floating Supply Characteristics
I
I
Oscillator I/O Characteristics
f
I
V
V
V
V
V
V
Output Characteristics
R
V
QCC
QBS
OS
OSC
CT
BIAS
BIAS
CCUV +
CCUV -
CLAMP
CTUV
RT +
RT -
RTUV
CT +
CT -
SD
t
Q
DT
D
DS(on)
rr
Previous Datasheet
rr
(V
(V
CC
CC
Reverse Recovery Time (MOSFET Body Diode)
Reverse Recovery Charge (MOSFET Body Diode)
Deadtime, LS Turn-Off to HS Turn-On &
HS Turn-Off to LS Turn-On
R
V
Threshold
V
Threshold
Quiescent V
V
Quiescent V
Offset Supply Leakage Current - --
Oscillator Frequency
C
C
R
R
R
2/3 V
1/3 V
Static Drain-to-Source On-Resistance
Diode Forward Voltage
, V
, V
CC
CC
CC
T
T
T
T
T
T
B
Duty Cycle
B
Input Current
Undervoltage Lockout
High Level Output Voltage, V
Low Level Output Voltage
Undervoltage Lockout, V
) = 12V unless otherwise specified.
) = 12V unless otherwise specified.
Supply Undervoltage Positive Going
Supply Undervoltage Negative Going
Zener Shunt Clamp Voltage
CC
CC
Threshold
Threshold
CC
BS
Parameter
Parameter
Supply Current
Supply Current
Definition
Definition
CC
---
- R
CC
T
- R
0.8
---
T
---
To Order
Index
50
---
100
Min. Typ. Max. Units
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Min.
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T
A
T
0.001
15.6
= 25ºC
300
100
200
200
100
A
2.0
8.4
8.0
8.0
4.0
30
20
20
20
= 25ºC
V
Typ. Max. Units
0.64
190
1.2
50
1.0
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2.5V < V
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Next Data Sheet
kHz
mV
µA
µA
µA
V
V
V
V
µC
µs
ns
%
IR51HD214
2.5V < V
Test Conditions
Test Conditions
R
R
di/dt = 100A/µs
I
B
I
RT
f
I
I
RT
T
I
T
T
I
OSC
RT
D
= V
C
C
I
CC
RT
j
F
= 35.7 k ,
= 7.04 k ,
T
T
= -100 µA
= 850mA
= 150 ºC
= 100 µA
= 850mA
= -1 mA
= 1 mA
= 5 mA
= 1 nF
= 1 nF
CC
CC
IN
= 20 kHz
= 250V
< V
< V
CCUV +
CCUV +