FDG6308 Fairchild Semiconductor, FDG6308 Datasheet - Page 3

• Manufacturer Part Number: FDG6308
• Description: P-Channel 1.8V Specified PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
1.5
0.5
1.6
1.2
0.8
0.4
2
1
0
2
0
Figure 3. On-Resistance Variation with
0.5
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
Figure 1. On-Region Characteristics.
0
1
Figure 5. Transfer Characteristics.
-50
V
DS
V
GS
= -5V
V
-3.5V
I
= -4.5V
GS
D
= -0.6A
-25
0.5
= -4.5V
-V
-V
1
GS
T
DS
, GATE TO SOURCE VOLTAGE (V)
-2.5V
0
Temperature.
J
, JUNCTION TEMPERATURE (
, DRAIN-SOURCE VOLTAGE (V)
1
-3.0V
25
1.5
1.5
50
-2.0V
T
A
= -55
75
2
o
C
-1.8V
100
2
o
C)
125
2.5
o
125
C
25
o
C
150
2.5
3
Figure 6. Body Diode Forward Voltage Variation
1.2
0.8
0.6
0.4
0.2
0.0001
1
0.001
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
0.01
2.25
1.75
1.25
0.75
1
0.1
2.5
1.5
10
1
2
1
Drain Current and Gate Voltage.
0
0
V
V
GS
1.5
GS
= 0V
= -1.8V
Gate-to-Source Voltage.
T
A
0.2
= 25
-V
-V
2
SD
GS
-2.0V
, BODY DIODE FORWARD VOLTAGE (V)
o
, GATE TO SOURCE VOLTAGE (V)
0.5
C
T
A
-I
2.5
= 125
0.4
D
-2.5V
, DRAIN CURRENT (A)
T
o
C
A
= 125
3
25
0.6
-3.0V
1
o
C
o
C
-55
3.5
o
-3.5V
C
0.8
1.5
4
FDG6308P Rev B (W)
I
-4.5V
D
1
= -0.3 A
4.5
1.2
2
5