FDC638 Fairchild Semiconductor, FDC638 Datasheet - Page 4

• Manufacturer Part Number: FDC638
• Description: P-Channel 2.5V Specified PowerTrenchTM MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
0.05
0.01
0.3
Figure 7. Gate Charge Characteristics.
30
Figure 9. Maximum Safe Operating Area.
5
1
5
4
3
2
1
0
0.1
0
I
D
0.005
SINGLE PULSE
R
= -4.5A
0.05
0.02
0.01
0.5
0.2
0.1
0.00001
0.2
V
JA
T
A
1
GS
A
=156 °C/W
= 25°C
= -4.5V
3
D = 0.5
- V
0.2
DS
0.5
0.1
0.05
, DRAIN-SOURCE VOLTAGE (V)
Q
g
0.02
, GATE CHARGE (nC)
0.0001
6
0.01
1
Single Pulse
Figure 11. Transient Thermal Response Curve.
2
V
D S
9
= -5V
-10V
0.001
5
Transient thermal response will change depending on the circuit board design.
Thermal characterization performed using the conditions described in Note 1b.
-15V
12
10
0.01
15
30
t , TIME (sec)
1
0.1
2500
1000
5
4
3
2
1
0
0.01
400
200
100
50
0.1
Figure 10. Single Pulse Maximum Power
Figure 8. Capacitance Characteristics
f = 1 MHz
V
GS
Dissipation.
= 0 V
0.1
0.3
1
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
P(pk)
T - T = P * R
Duty Cycle, D = t / t
J
1
R
1
t
R
JA
1
A
10
t
JA
(t) = r(t) * R
2
= 156°C/W
C iss
C oss
C rss
3
JA
10
1
(t)
SINGLE PULSE
R
2
JA
JA
100
T = 25°C
A
=156°C/W
.
10
FDC638P Rev.B
100
300
300
20