LF412AMH National Semiconductor, LF412AMH Datasheet - Page 3

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LF412AMH

Manufacturer Part Number
LF412AMH
Description
Low Offset/ Low Drift Dual JFET Input Operational Amplifier
Manufacturer
National Semiconductor
Datasheet

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V
I
I
R
A
V
V
CMRR
PSRR
I
SR
GBW
Symbol
Symbol
OS
B
S
(Note 7)
OS
V
VOL
O
CM
(Note 7)
IN
DC Electrical Characteristics
Note 2: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
AC Electrical Characteristics
Absolute Maximum Ratings
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 11)
Supply Voltage
Differential Input Voltage
Input voltage Range
Output Short Circuit
Power Dissipation
OS
(Note 3)
Duration (Note 4)
(Note 12)
/ T
Amplifier to Amplifier
Coupling
Slew Rate
Gain-Bandwidth Product
Input Offset Voltage
Average TC of Input
Offset Voltage
Input Offset Current
Input Bias Current
Input Resistance
Large Signal Voltage
Gain
Output Voltage Swing
Input Common-Mode
Voltage Range
Common-Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
Supply Current
Parameter
Parameter
H Package
(Note 5)
Continuous
LF412A
R
R
V
(Notes 7, 9)
V
(Notes 7, 9)
T
V
R
Over Temperature
V
R
(Note 10)
V
±
±
±
j
S
S
S
S
O
S
S
L
S
= 25˚C
22V
38V
19V
T
(Input Referred)
V
V
=
=
=
= 2k, T
=
= 10 k , T
= 10 k
= 0V, R
A
S
S
10k
±
±
±
±
= 25˚C, f = 1 Hz-20 kHz
=
=
15V
15V
15V, V
15V, R
±
±
15V, T
15V, T
A
Conditions
= 25˚C
N Package
(Note 2)
Conditions
(Note 8)
L
670 mW
O
Continuous
L
A
=
= 10k
=
= 25˚C
A
A
LF412
±
±
±
±
= 25˚C
= 25˚C
10V,
18V
30V
15V
T
T
T
T
T
T
j
j
j
j
j
= 25˚C
= 70˚C
j
= 25˚C
= 70˚C
= 125˚C
= 125˚C
3
T
Operating Temp. Range
Storage Temp.
Lead Temp.
ESD Tolerance
Min
jA
j
10
Range
(Soldering, 10 sec.)
(Note 13)
3
max
(Typical)
Min
±
±
50
25
80
80
12
16
LF412A
−120
Typ
15
4
LF412A
±
+19.5
−16.5
10
Typ
200
200
100
100
0.5
3.6
25
50
13.5
7
12
Max
Max
100
200
1.0
5.6
10
25
50
2
4
−65˚C T
Min
2.7
8
H Package
152˚C/W
(Note 6)
1700V
150˚C
260˚C
Min
±
±
25
15
70
70
12
11
LF412
A
−120
Typ
15
150˚C −65˚C T
4
LF412
±
+14.5
−11.5
10
Typ
200
200
100
100
1.0
3.6
25
50
13.5
7
12
Max
N Package
Max
100
200
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3.0
6.5
115˚C/W
(Note 6)
20
25
50
2
4
1700V
260˚C
115˚C
A
Units
V/µs
MHz
dB
150˚C
µV/˚C
Units
V/mV
V/mV
mV
mA
pA
nA
nA
pA
nA
nA
dB
dB
V
V
V

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