M40Z300W ST Microelectronics, M40Z300W Datasheet - Page 7

• Manufacturer Part Number: M40Z300W
• Description: NVRAM CONTROLLER for up to EIGHT LPSRAM
• Manufacturer: ST Microelectronics

Table 6B. DC Characteristics for M40Z300W
(T
Note: 1. Outputs deselected.
Symbol
A
I
V
I
I
V
I
CCDR
THS
V
OUT1
OUT2
V
= 0 to 70°C; V
LI
V
V
I
V
OHB
CC
PFD
2. For RST & BL pins (Open Drain).
3. Chip Enable outputs (E1
4. Measured with V
OH
OL
SO
IH
IL
(1)
Higher leakage currents will reduce battery life.
Input Leakage Current
Supply Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage (open drain)
Output High Voltage
V
V
V
Data Retention Mode Current
Threshold Select Voltage
Power-fail Deselect Voltage (THS = V
Power-fail Deselect Voltage (THS = V
Battery Back-up Switchover Voltage
OH
OUT
OUT
Battery Back-up
Current (Active)
Current (Battery Back-up)
CC
OUT
= 3V to 3.6V or 2.7V to 3.3V)
and E1
CON
Parameter
CON
- E4
(3)
- E4
CON
) can only sustain CMOS leakage currents in the battery back-up mode.
CON
(4)
open.
(2)
SS
OUT
)
)
V
V
V
Test Condition
0V
I
OUT
OUT2
OUT
OUT
I
Outputs open
OH
I
I
OL
OL
> V
= –2.0mA
> V
> V
V
= 4.0mA
= 10mA
= –1.0µA
IN
BAT
CC
CC
V
–0.3
–0.2
–0.3
CC
–0.3
Min
V
2.0
2.4
2.0
2.8
2.5
SS
M40Z300, M40Z300W
Typ
100
2.9
2.9
2.6
2.5
2
V
CC
V
Max
150
100
100
0.8
0.4
0.4
3.6
3.0
2.7
±1
OUT
4
+ 0.3
Unit
mA
mA
mA
µA
µA
nA
V
V
V
V
V
V
V
V
V
V
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