IRFR13N15D International Rectifier, IRFR13N15D Datasheet

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IRFR13N15D

Manufacturer Part Number
IRFR13N15D
Description
(IRFR13N15D / IRFU13N15D) Power MOSFET
Manufacturer
International Rectifier
Datasheet

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Company
Part Number
Manufacturer
Quantity
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Part Number:
IRFR13N15DTRPBF
Manufacturer:
IR
Quantity:
20 000
Absolute Maximum Ratings
Typical SMPS Topologies
www.irf.com
Applications
Notes
I
I
I
P
V
dv/dt
T
T
Benefits
D
D
DM
J
STG
D
GS
@ T
@ T
Effective C
App. Note AN1001)
and Current
@T
High frequency DC-DC converters
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Telecom 48V input Active Clamp Forward Converter
Switching Losses
C
C
C
= 25°C
= 100°C
= 25°C
through
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
to Simplify Design, (See
are on page 10
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
150V
DSS
300 (1.6mm from case )
IRFR13N15D
HEXFET
D-Pak
-55 to + 175
R
Max.
0.57
± 30
9.8
3.8
DS(on)
14
56
86
0.18
®
Power MOSFET
IRFR13N15D
IRFU13N15D
IRFU13N15D
max
I-Pak
PD - 93905A
Units
W/°C
V/ns
14A
°C
W
I
A
V
D
1
6/29/00

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IRFR13N15D Summary of contents

Page 1

... Telecom 48V input Active Clamp Forward Converter Notes through are on page 10 www.irf.com SMPS MOSFET HEXFET V DSS 150V D-Pak IRFR13N15D @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) PD - 93905A IRFR13N15D IRFU13N15D ® Power MOSFET R max I DS(on) D 0.18 14A I-Pak IRFU13N15D Max. Units 14 9 ...

Page 2

... IRFR13N15D/IRFU13N15D Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...

Page 3

... Fig 1. Typical Output Characteristics 100 ° 175 ° 20µs PULSE WIDTH 0 Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com IRFR13N15D/IRFU13N15D 100 TOP BOTTOM 10 1 ° 0.1 100 0.1 Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0.5 = 50V 0.0 -60 -40 - ...

Page 4

... IRFR13N15D/IRFU13N15D 10000 0V, C iss = rss = oss = 1000 Ciss Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ° 175 0.1 0.2 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...

Page 5

... Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRFR13N15D/IRFU13N15D R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1 ...

Page 6

... IRFR13N15D/IRFU13N15D Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 240 200 ...

Page 7

... Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET www.irf.com IRFR13N15D/IRFU13N15D Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - + dv/dt controlled Driver same type as D.U.T. ...

Page 8

... IRFR13N15D/IRFU13N15D D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (. (. (. 1 1 ...

Page 9

... (. (. .28 (. I-Pak (TO-251AA) Part Marking Information www.irf.com IRFR13N15D/IRFU13N15D (. (. (. (. (. (. & ...

Page 10

... IRFR13N15D/IRFU13N15D D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches 12 11 LLIN G D IME ILL ILLIM ...

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