ZXM61P03 Zetex Semiconductors, ZXM61P03 Datasheet - Page 4

• Manufacturer Part Number: ZXM61P03
• Description: 30V P-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: Zetex Semiconductors

ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JULY 1999
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
ZXM61P03F
SYMBOL MIN.
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
84
-30
-1.0
0.44
amb
= 25°C unless otherwise stated).
TYP.
140
45
20
1.9
2.9
8.9
5.0
14.8
7.7
MAX.
-1
0.35
0.55
4.8
0.62
1.3
-0.95
100
UNIT CONDITIONS.
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
A
I
V
V
I
V
V
V
f=1MHz
V
R
(Refer to test circuit)
V
I
(Refer to test circuit)
T
V
T
di/dt= 100A/ s
V
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
=-250 A, V
=-250 A, V
=-0.6A
=25°C, I
=25°C, I
=6.2 , R
=-30V, V
=-10V,I
=-25 V, V
=-24V,V
= 20V, V
=-10V, I
=-4.5V, I
=0V
=-15V, I
S
F
=-0.6A,
D
=-0.6A,
D
D
GS
=-0.3A
D
D
GS
=25
=-0.6A
GS
GS
=-0.6A
DS
DS
=-0.3A
=-10V,
=0V
=0V,
=0V
= V
=0V
GS