GAL22V10 Lattice Semiconductor, GAL22V10 Datasheet - Page 8

• Manufacturer Part Number: GAL22V10
• Description: High Performance E2CMOS PLD Generic Array Logic
• Manufacturer: Lattice Semiconductor

1) Refer to Switching Test Conditions section.
2) Calculated from fmax with internal feedback. Refer to fmax Description section.
3) Refer to fmax Description section.
*Characterized but not 100% tested.
PARAM.
AC Switching Characteristics
Capacitance (T
f
t
max
t
t
t
t
t
t
t
t
t
t
t
arw
t
spr
wh
dis
arr
pd
co
cf
su
en
wl
ar
SYMBOL
h
2
3
C
C
I/O
I
COND.
TEST
—
—
—
—
—
—
—
—
C
A
A
A
A
A
B
A
1
Input or I/O to Comb. Output
Clock to Output Delay
Clock to Feedback Delay
Setup Time, Input or Fdbk before Clk
Hold Time, Input or Fdbk after Clk
Maximum Clock Frequency with
External Feedback, 1/(tsu + tco)
Maximum Clock Frequency with
Internal Feedback, 1/(tsu + tcf)
Maximum Clock Frequency with
No Feedback
Clock Pulse Duration, High
Clock Pulse Duration, Low
Input or I/O to Output Enabled
Input or I/O to Output Disabled
Input or I/O to Asynch. Reset of Reg.
Asynch. Reset Pulse Duration
Asynch. Reset to Clk
Synch. Preset to Clk
DESCRIPTION
A
= 25 C, f = 1.0 MHz)
Input Capacitance
I/O Capacitance
PARAMETER
Over Recommended Operating Conditions
Recovery Time
Recovery Time
MAXIMUM*
8
8
8
83.3
110
125
MIN. MAX.
COM / IND
—
1
1
6
0
4
4
1
1
1
8
8
8
Specifications GAL22V10D
-10
Specifications GAL22V10
UNITS
2.5
13
10
10
—
—
—
—
—
—
—
—
—
—
7
9
pF
pF
55.5
83.3
MIN. MAX.
COM / IND
10
80
15
10
10
—
3
2
0
6
6
3
3
3
-15
2.5
15
15
15
20
—
—
—
—
—
—
—
—
—
—
8
41.6
45.4
MIN. MAX.
12
50
10
10
20
20
14
—
3
2
0
3
3
3
V
TEST CONDITIONS
V
IND
-20
CC
CC
= 5.0V, V
20
10
20
20
25
= 5.0V, V
—
—
—
—
—
—
—
—
—
—
8
33.3
35.7
38.5
MIN. MAX.
COM / IND
—
15
13
13
25
25
15
3
2
0
3
3
3
I/O
-25
I
= 2.0V
= 2.0V
25
15
13
25
25
25
—
—
—
—
—
—
—
—
—
—
UNITS
MHz
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns