BS62LV2005 Brilliance Semiconductor, BS62LV2005 Datasheet - Page 2

• Manufacturer Part Number: BS62LV2005
• Description: Very Low Power/Voltage CMOS SRAM 256K X 8 bit
• Manufacturer: Brilliance Semiconductor

R0201-BS62LV2005
R0201-BS62LV2005
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
A0-A17 Address Input
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
WE Write Enable Input
OE Output Enable Input
DQ0-DQ7 Data Input/Output
Ports
Vcc
Gnd
Output Disabled
TRUTH TABLE
(Power Down)
ABSOLUTE MAXIMUM RATINGS
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
PIN DESCRIPTIONS
SYMBOL
Not selected
V
T
T
P
I
OUT
BIAS
STG
TERM
T
MODE
Read
Write
BSI
Terminal Voltage with
Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Name
PARAMETER
WE
H
H
X
X
L
CE1
H
X
L
L
L
-40 to +125
-60 to +150
RATING
Vcc+0.5
These 18 address inputs select one of the 262,144 x 8-bit words in the RAM
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in a standby power mode. The DQ pins will be in the high
impedance state when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
These 8 bi-directional ports are used to read data from or write data into the RAM.
Power Supply
Ground
-0.5 to
1.0
(1)
20
CE2
H
H
H
X
L
UNITS
mA
O
O
W
V
C
C
OE
2
X
X
H
X
L
1. This parameter is guaranteed and not tested.
OPERATING RANGE
CAPACITANCE
SYMBOL
Commercial
C
C
RANGE
Industrial
DQ
IN
I/O OPERATION
Function
High Z
High Z
Input
Capacitance
Input/Output
Capacitance
D
PARAMETER
D
OUT
IN
TEMPERATURE
-40
(1)
0
O
AMBIENT
O
(TA = 25
C to +70
C to +85
BS62LV2005
CONDITIONS
V
V
I/O
IN
O
O
=0V
=0V
C
o
C
C, f = 1.0 MHz)
Vcc CURRENT
I
CCSB
I
I
I
, I
4.5V ~ 5.5V
4.5V ~ 5.5V
CC
CC
CC
MAX.
CCSB1
Revision 2.4
April 2002
6
8
Vcc
UNIT
pF
pF