BS62LV8003 Brilliance Semiconductor, BS62LV8003 Datasheet - Page 6
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BS62LV8003
Manufacturer Part Number
BS62LV8003
Description
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Manufacturer
Brilliance Semiconductor
Datasheet
1.BS62LV8003.pdf
(10 pages)
R0201-BS62LV8003
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE
WRITE CYCLE1
AC ELECTRICAL CHARACTERISTICS
PARAMETER
t
t
t
t
t
t
t
t
t
t
t
JEDEC
NAME
ADDRESS
OE
CE2
CE1
AVAX
E1LWH
AVW L
AVWH
WLWH
WHAX
WLOZ
DVWH
WHDX
GHOZ
WHQX
WE
D
D
IN
OUT
BSI
PARAMETER
(1)
NAME
t
t
t
t
t
t
t
t
t
t
t
WC
CW
AS
AW
WP
WR
WHZ
DW
DH
OHZ
OW
Write Cycle Time
Chip Select to End of Write
Address Set up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
t
(4,10)
AS
t
OHZ
DESCRIPTION
( TA = 0
(5)
(5)
t
AW
o
6
(CE2,CE1 , WE)
C to + 70
t
t
t
WC
CW
WP
(11)
o
(2)
C , Vcc = 3.0V )
70
70
70
35
30
MIN. TYP. MAX.
0
0
0
0
0
5
t
BS62LV8003-70
DW
--
--
--
--
--
--
--
--
--
--
--
t
t
WR
DH
(3)
30
30
--
--
--
--
--
--
--
--
--
(3)
BS62LV8003
100
100
100
50
40
MIN. TYP. MAX.
0
0
0
0
0
10
BS62LV8003-10
--
--
--
--
--
--
--
--
--
--
--
40
40
--
--
--
--
--
--
--
--
--
Revision 2.4
April 2002
UNIT
ns
ns
ns
ns
ns
ns
ns
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ns
ns