AM29F010-120EC Advanced Micro Devices, AM29F010-120EC Datasheet - Page 12

• Manufacturer Part Number: AM29F010-120EC
• Description: 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
• Manufacturer: Advanced Micro Devices

written. If the time between additional sector erase
commands can be assumed to be less than 50 s, the
system need not monitor DQ3. Any command during
the time-out period resets the device to reading
array data. The system must rewrite the command se-
quence and any additional sector addresses and com-
mands.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector
Erase Timer” section.) The time-out begins from the ris-
ing edge of the final WE# pulse in the command se-
quence.
Once the sector erase operation has begun, all other
commands are ignored.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the sta-
tus of the erase operation by using DQ7 or DQ6. Refer
to “Write Operation Status” for information on these
status bits.
Figure 2 illustrates the algorithm for the erase opera-
tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
the Sector Erase Operations Timing diagram for timing
waveforms.
12
Am29F010
Notes:
1. See the appropriate Command Definitions table for erase
2. See “DQ3: Sector Erase Timer” for more information.
command sequence.
No
Figure 2. Erase Operation
Command Sequence
Erasure Completed
Write Erase
from System
Data = FFh?
Data Poll
START
Yes
Embedded
Erase
algorithm
in progress
16736G-8