CNY17F Siemens Semiconductor Group, CNY17F Datasheet
CNY17F
Manufacturer Part Number
CNY17F
Description
PHOTOTRANSISTOR NO BASE CONNECTION OPTOCOUPLER
Manufacturer
Siemens Semiconductor Group
Datasheet
1.CNY17F.pdf
(4 pages)
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FEATURES
• High Current Transfer Ratio
• Breakdown Voltage, 5300 VAC
• High Collector-Emitter Voltage
• V
• No Base Terminal Connection for Improved
• Field-Effect Stable by TRIOS*
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Underwriters Lab File #E52744
•
Maximum Ratings (T
Emitter
Reverse Voltage ................................................ 6 V
DC Forward Current .................................... 60 mA
Surge Forward Current (t 10 s) ...................2.5 A
Total Power Dissipation ............................ 100 mW
Detector
Collector-Emitter Breakdown Voltage ............. 70 V
Collector Current ..........................................50 mA
Collector Current (t 1 ms) ......................... 100 mA
Total Power Dissipation ............................ 150 mW
Package
Isolation Test Voltage (between emitter and detector
Creepage .................................................... >7 mm
Clearance................................................... >7 mm
Isolation Thickness between Emitter
Comparative Tracking Index per
Isolation Resistance (V
Storage Temperature Range ............–55 to +150 C
Ambient Temperature Range ...........–55 to +100 C
Junction Temperature ................................... 100 C
Soldering Temperature
* TRIOS—TR ansparent IO n Sh ield
CNY17F-1, 40-80%
CNY17F-2, 63-125%
CNY17F-3, 100-200%
CNY17F-4, 160-320%
Common Mode Interface Immunity
referred to standard climate 23/50
DIN 50014) .................................... 5300 VAC
and Detector......................................... 0.4 mm
DIN IEC 112/VDE 0303, part 1 ...................... 175
(max. 10 s, dip soldering:
distance to seating plane 1.5 mm) .......... 260 C
CEO
D E
V
=70 V
VDE #0884, Available with Option 1
A
10
=25 C)
=500 V)
RMS
10
11
RMS
DESCRIPTION
The CNY17F is an optocoupler consisting of a Gallium Arsenide infrared
emitting diode optically coupled to a silicon planar phototransistor
detector in a plastic plug-in DIP-6 package.
The coupling device is suitable for signal transmission between two
electrically separated circuits. The potential difference between the cir-
cuits to be coupled is not allowed to exceed the maximum permissible
reference voltages.
In contrast to the CNY17 Series, the base terminal of the F type is not
connected, resulting in a substantially improved common-mode interfer-
ence immunity.
Characteristics (T
Dimensions in inches (mm)
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector
Capacitance
Thermal Resistance
Package
Saturation Voltage,
Collector-Emitter
Coupling
Capacitance
.248 (6.30)
.256 (6.50)
.018 (0.45)
.022 (0.55)
(1.00)
.039
5–1
Min.
typ.
4
3
4
.335 (8.50)
.343 (8.70)
2
5
A
=25 C)
1
6
Symbol
V
V
I
C
R
C
R
V
C
R
.100 (2.54) typ.
F
BR
thJA
thJA
CEsat
.020 (.051) min.
O
CE
C
.031 (0.80)
.035 (0.90)
Pin One ID
CNY17F SERIES
.130 (3.30)
.150 (3.81)
NO BASE CONNECTION
1.25 ( 1.65)
0.01 ( 10)
25
750
5.2
500
0.25 ( 0.4)
0.6
Cathode
PHOTOTRANSISTOR
6
Anode
NC
1
2
3
OPTOCOUPLER
18 typ.
Unit
V
V
pF
K/W
pF
K/W
V
pF
.300 (7.62)
.300 (7.62)
.347 (8.82)
.010 (.25)
.014 (.35)
A
typ.
Condition
I
I
V
V
V
MHz
I
I
F
R
F
C
R
R
CE
=60mA
=10 mA
=10 A
=2.5 mA
=6 V
=0 V, f=1 MHz
6
5
4
=5 V, f=1
.110 (2.79)
.150 (3.81)
Base
Collector
Emitter
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CNY17F Summary of contents
Page 1
... DESCRIPTION The CNY17F is an optocoupler consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP-6 package. The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the cir- cuits to be coupled is not allowed to exceed the maximum permissible reference voltages ...
Page 2
... Figure 3. Current transfer ratio versus diode current (T =– Figure 4. Current transfer ratio versus diode current ( Figure 5. Current transfer ratio versus diode current (T = CNY17F ...
Page 3
... Figure 7. Current transfer ratio versus diode current (T = Figure 8. Current transfer ratio versus temperature (I = Figure 9. Output characteristics CNY17F- =25 C) IC=f Figure 10. Forward voltage V =f Figure 11. Collector emitter off-state current I =f(V, =0) CEO A F 5– ...
Page 4
... Figure 15. Saturation voltage versus collector current and modulation depth CNY17F =25 C) CEsat C A Figure 16. Permissible pulse load D=parameter Figure 17. Permissible power dissipa- tion transistor and diode P =f(T ) tot A Figure 18. Permissible forward current diode I =f 5–4 Figure 19. Transistor capacitance ...