2SK1161 Hitachi Semiconductor, 2SK1161 Datasheet - Page 3

• Manufacturer Part Number: 2SK1161
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25°C)
Item
Drain to source
breakdown voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage
drain current
Gate to source cutoff voltage
Static Drain to source 2SK1161 R
on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
See characteristic curves of 2SK1157, 2SK1158.
1. Pulse test
2SK1161 V
2SK1162
2SK1161 I
2SK1162
2SK1162
Symbol Min
V
I
V
|yfs|
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
450
500
—
—
2.0
—
—
4.0
—
—
—
—
—
—
—
—
—
30
Typ
—
—
—
—
—
0.6
0.7
7.0
1050
280
40
15
60
90
45
1.0
350
Max
—
—
250
3.0
0.8
0.9
—
—
—
—
—
—
—
—
—
—
10
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Test conditions
I
I
V
V
V
I
I
I
V
f = 1 MHz
I
R
I
I
di
2SK1161, 2SK1162
D
G
D
D
D
D
F
F
GS
DS
DS
DS
L
F
= 10 A, V
= 10 A, V
= 10 mA, V
= 100 A, V
= 1 mA, V
= 5 A, V
= 5 A, V
= 5 A, V
/dt = 100 A/ s
= 6
= 360 V, V
= 400 V, V
= 10 V, V
= 25 V, V
GS
DS
GS
GS
GS
DS
= 10 V *
= 10 V *
= 10 V,
GS
GS
= 0
= 0,
DS
GS
GS
= 10 V
DS
= 0,
= 0
= 0
= 0
= 0
= 0
1
1
3