2SK1329 Hitachi Semiconductor, 2SK1329 Datasheet
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2SK1329
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2SK1329 Summary of contents
Page 1
... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3PFM Gate 2. Drain 3. Source ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol ...
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... V — 1.0 — — 450 — rr 2SK1328, 2SK1329 Unit Test conditions mA 100 360 400 V, V ...
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... Power vs. Temperature Derating 120 Case Temperature T 3 D=1 1.0 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 10 100 4 100 30 10 1.0 0.3 0.1 100 150 (°C) C Normalized Transient Thermal Impedance vs. Pulse Width Pulse Width PW (s) Maximum Safe Operation Area 3 2SK1329 2SK1328 Ta = 25° 100 300 Drain to Source Voltage V ...
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Max 5.45 0.5 5.5 1.6 1.4 Max 1.0 0.2 5.45 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm 0.3 3.2 0.6 0.2 TO-3PFM — — 5.6 g ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...