M36L0R7050 ST Microelectronics, M36L0R7050 Datasheet - Page 13

• Manufacturer Part Number: M36L0R7050
• Description: 128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32 Mbit (2M x16) PSRAM
• Manufacturer: ST Microelectronics

Table 7. Flash Memory DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
I
Symbol
I
DD6
I
I
I
DD5
DD7
PP1
PP3
I
I
I
I
I
I
DD1
DD2
DD3
DD4
PP2
I
LO
LI
2. V
(1,2)
(1)
(1)
(1)
(1)
DDF
Input Leakage Current
Output Leakage Current
Supply Current
Asynchronous Read (f=6MHz)
Supply Current
Synchronous Read (f=40MHz)
Supply Current
Synchronous Read (f=54MHz)
Supply Current
(Reset)
Supply Current (Standby)
Supply Current (Automatic
Standby)
Supply Current (Program)
Supply Current (Erase)
Supply Current
(Dual Operations)
Supply Current Program/ Erase
Suspended (Standby)
V
V
V
V
Dual Operation current is the sum of read and program or erase currents.
PPF
PPF
PPF
PPF
Supply Current (Program)
Supply Current (Erase)
Supply Current (Read)
Supply Current (Standby)
Parameter
Program/Erase in one
Program/Erase in one
Read in another Bank
Read in another Bank
Bank, Asynchronous
Bank, Synchronous
0V
E
E
RP
E
E
0V
Test Condition
F
F
F
F
V
V
V
V
V
V
V
V
V
V
= V
F
= V
Continuous
Continuous
= V
= V
PPF
PPF
PPF
PPF
PPF
PPF
PPF
PPF
PPF
PPF
16 Word
16 Word
V
= V
4 Word
8 Word
4 Word
8 Word
V
OUT
IL
IL
DDF
DDF
IN
, G
, G
= V
= V
= V
= V
= V
= V
= V
= V
SS
V
V
F
F
± 0.2V
± 0.2V
± 0.2V
PPH
DDF
PPH
DDF
PPH
DDF
PPH
DDF
DDF
DDF
V
V
= V
= V
DDQ
DDQ
IH
IH
M36L0R7050T0, M36L0R7050B0
Min
Typ
0.2
0.2
0.2
0.2
10
10
13
18
16
18
21
22
25
25
25
10
10
20
32
25
7
8
8
2
2
Max
±1
±1
15
16
18
20
25
18
20
25
27
70
70
70
15
20
15
20
35
47
70
5
5
5
5
5
5
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
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