MAAPSM0015 Tyco, MAAPSM0015 Datasheet

MAAPSM0015

Manufacturer Part Number

MAAPSM0015

Description

DC-20 GHz GaAs MMIC Amplifier

Manufacturer

Tyco

Datasheet

1.MAAPSM0015.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MAAPSM0015-DIE

Manufacturer:

m/a-com

Quantity:

5 000

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Download datasheet (159Kb)

DC-20 GHz GaAs MMIC Amplifier

Features

Description

The M/A-COM MAAPSM0015 is a medium power

wideband AGC amplifier that typically provides 11 dB

of gain with 25 dB of AGC range. The circuit topology

is a six-section traveling wave amplifier using common

source FETs which provide very wide bandwidth.

Typical input and output return loss is 12 dB. RF ports

are DC coupled, enabling the user to customize sys-

tem corner frequencies. DC bias can be provided

through the drain termination resistor without the need

for an external bias inductor. For higher power appli-

cations, an external inductor can be used to bias the

amplifier through the RFout or Vd_aux pads. Applica-

tions include OC-192 12.5 GBit/s receive AGC ampli-

fier and lithium niobate Mach-Zehnder modulator driver

amplifer.

The MAAPSM0015 requires off-chip decoupling and

blocking components. Each device is 100% DC and

RF tested on wafer to ensure performance compliance.

The device is provided in chip form. M/A-Com fabri-

cates the MAAPSM0015 using a 0.5 µm gate length

low noise multi-function self aligned gate (MSAG)

MESFET process. This process features silicon nitride

passivation and polimide scratch protection. The die

thickness is 0.003”.

Wide Frequency Range: DC-20 GHz

On Chip Bias Network

High Gain : 11 dB

Gain Flatness: + 0.75 dB

Typical Psat: 21 dBm

Return Loss: 12 dB

Low Bias Current : 100mA

2.0 mm

DC-20 GHz GaAs MMIC Amplifier

Primary Applications

Electrical Characteristics

8V, 100 mA

12.5GBit OC-192 LN/MZ Driver

12.4GBit OC-192 AGC Receiver

SONET/SDH

Output Return Loss

Input Return Loss

Reverse Isolation

sat

Gain Flatness

Noise Figure

(+8V, 100 mA)

Bandwidth

Parameter

Gain

3.0 mm

DC-20

+ 0.75

Preliminary

>-13

Typ

-12

Rev. 2.0

Units

dBm

GHz

Related parts for MAAPSM0015

MAAPSM0015 Summary of contents

Page 1

... Each device is 100% DC and RF tested on wafer to ensure performance compliance. The device is provided in chip form. M/A-Com fabri- cates the MAAPSM0015 using a 0.5 µm gate length low noise multi-function self aligned gate (MSAG) MESFET process. This process features silicon nitride passivation and polimide scratch protection. The die thickness is 0.003” ...

Page 2

... Frequency (GHz Frequency (GHz) DC-20GHz Wafer Probe Data Vds = 8,0V, Ids = 100mA bias through RFout Frequency (GHz) COMPANY CONFIDENTIAL MAAPSM0015 100 mA -15 - -25 - Frequency (GHz) Vds=8V, Id=100mA ...

Page 3

... North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. MAAPSM0015 Bond Pad Location All Dimensions are in mm (inches COMPANY CONFIDENTIAL MAAPSM0015 Preliminary ) ...

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