K4T51043Q Samsung, K4T51043Q Datasheet - Page 20

• Manufacturer Part Number: K4T51043Q
• Description: 512Mb B-die DDR2 SDRAM
• Manufacturer: Samsung

512Mb B-die DDR2 SDRAM
Write preamble
Address and control input
hold time
Address and control input
setup time
Read preamble
Read postamble
Active to active command
period for 1KB page size
products
Active to active command
period for 2KB page size
products
Four Activate Window for
1KB page size products
Four Activate Window for
2KB page size products
CAS to CAS command
delay
Write recovery time
Auto precharge write
recovery + precharge time
Internal write to read
command delay
Internal read to precharge
command delay
Exit self refresh to a non-
read command
Exit self refresh to a read
command
Exit precharge power down
to any non-read command
Exit active power down to
read command
Exit active power down to
read command
(slow exit, lower power)
CKE minimum pulse width
(high and low pulse width)
ODT turn-on delay
ODT turn-on
Parameter
Symbol
tWPRE
tIH(base)
tIS(base)
tRPRE
tRPST
tRRD
tRRD
tFAW
tFAW
tCCD
tWR
tDAL
tWTR
tRTP
tXSNR
tXSRD
tXP
tXARD
tXARDS
t
t
t
CKE
AOND
AON
WR+tRP
tAC(min)
tRFC +
6 - AL
min
37.5
375
250
200
0.35
0.9
0.4
7.5
7.5
7.5
10
50
10
15
2
2
3
2
2
DDR2-533
tAC(max
max
Page 20 of 29
)+1
1.1
0.6
x
x
x
x
2
x
x
x
x
x
x
WR+tRP
tAC(min)
tRFC +
6 - AL
min
37.5
0.35
475
350
200
0.9
0.4
7.5
7.5
10
50
15
10
10
3
2
2
2
2
DDR2-400
tAC(max)
max
1.1
0.6
+1
x
x
x
2
x
x
x
x
x
x
x
Units
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ps
ps
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
14,16,18
14,16,18
13, 25
9, 10
,23
,22
28
28
12
12
23
33
36
11
9
Rev. 1.4 Feb. 2005
DDR2 SDRAM