K4S161622D-TC/L10 Samsung semiconductor, K4S161622D-TC/L10 Datasheet - Page 28
![no-image](/images/manufacturer_photos/0/5/578/samsung_semiconductor_sml.jpg)
K4S161622D-TC/L10
Manufacturer Part Number
K4S161622D-TC/L10
Description
512K x 16Bit x 2 Banks Synchronous DRAM
Manufacturer
Samsung semiconductor
Datasheet
1.K4S161622D-TCL10.pdf
(41 pages)
- Current page: 28 of 41
- Download datasheet (2Mb)
DQ
CLOCK
K4S161622D
Page Read & Write Cycle at Same Bank @Burst Length=4
A
ADDR
DQM
10
CKE
RAS
CAS
WE
/AP
CS
BA
CL=2
CL=3
*Note :
0
Row Active
(A-Bank)
Ra
Ra
1
1. To write data before burst read ends, DQM should be asserted three cycle prior to write
2. Row precharge will interrupt writing. Last data input, t
3. DQM should mask invalid input data on precharge command cycle when asserting precharge
command to avoid bus contention.
before end of burst. Input data after Row precharge cycle will be masked internally.
2
tRCD
3
(A-Bank)
Read
Ca0
4
5
(A-Bank)
Read
Cb0
Qa0
6
Qa1
Qa0
7
Qb0
Qa1
8
Qb1 Qb2
Qb0
*Note 1
9
RDL
HIGH
Qb1
before Row precharge, will be written.
10
11
(A-Bank)
Write
Dc0
Dc0
Cc0
tCDL
12
Dc1
Dc1
13
(A-Bank)
Write
Dd0
Dd0
Cd0
14
Dd1
Dd1
15
tRDL
Precharge
(A-Bank)
*Note 2
*Note 3
CMOS SDRAM
16
17
18
: Don't care
19
Related parts for K4S161622D-TC/L10
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![K4S161622D-TC/L55](/images/no-image3.png)
Part Number:
Description:
512K x 16Bit x 2 Banks Synchronous DRAM
Manufacturer:
SAMSUNG [Samsung semiconductor]
Datasheet:
![K4S161622D-TI/E50](/images/no-image3.png)
Part Number:
Description:
1M x 16 SDRAM
Manufacturer:
SAMSUNG [Samsung semiconductor]
Datasheet:
![K4S161622D-TC10000](/images/manufacturer_photos/0/5/578/samsung_semiconductor_tmb.jpg)
Part Number:
Description:
Manufacturer:
Samsung Semiconductor
Datasheet:
![k4s161622d](/images/no-image3.png)
Part Number:
Description:
512k X 16bit X 2 Banks Synchronous Dram
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
![K4S161622D-TI/E10](/images/manufacturer_photos/0/5/578/samsung_semiconductor_tmb.jpg)
Part Number:
Description:
1M x 16 SDRAM
Manufacturer:
Samsung semiconductor
Datasheet:
![K4D551638F-TC50](/images/manufacturer_photos/0/5/577/samsung_tmb.jpg)
Part Number:
Description:
K4D551638F-TC50Samsung semiconductor [256Mbit GDDR SDRAM]
Manufacturer:
Samsung
Datasheet:
![K5A3280YBC-T755](/images/manufacturer_photos/0/5/577/samsung_tmb.jpg)
Part Number:
Description:
K5A3280YBC-T755Samsung semiconductor [MCP MEMORY]
Manufacturer:
Samsung
Datasheet:
![IRF252](/images/manufacturer_photos/0/5/578/samsung_semiconductor_tmb.jpg)
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
Samsung semiconductor
Datasheet:
![IRF342](/images/manufacturer_photos/0/5/578/samsung_semiconductor_tmb.jpg)
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
Samsung semiconductor
Datasheet:
![IRF422](/images/manufacturer_photos/0/5/578/samsung_semiconductor_tmb.jpg)
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
Samsung semiconductor
Datasheet:
![irfs630](/images/no-image3.png)
Part Number:
Description:
Transistor,mosfet,n-channel,200v V Br Dss,5.9a
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
![KA3S0765R](/images/no-image3.png)
Part Number:
Description:
Samsung Power Switch
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
![mmdoe28gxmsp-0va](/images/no-image3.png)
Part Number:
Description:
Samsung Pm410 Ssd 1.8 Lif 128/64gb
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
![IRF122](/images/manufacturer_photos/0/5/578/samsung_semiconductor_tmb.jpg)
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
Samsung semiconductor
Datasheet:
![IRF131](/images/manufacturer_photos/0/5/578/samsung_semiconductor_tmb.jpg)
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
Samsung semiconductor
Datasheet: