M464S1654ETS Samsung semiconductor, M464S1654ETS Datasheet - Page 14
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M464S1654ETS
Manufacturer Part Number
M464S1654ETS
Description
SDRAM Unbuffered SODIMM
Manufacturer
Samsung semiconductor
Datasheet
1.M464S1654ETS.pdf
(18 pages)
AC CHARACTERISTICS
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
Notes :
128MB, 256MB, 512MB Unbuffered SODIMM
CLK cycle
time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
t
t
SAC
t
t
t
SHZ
SLZ
OH
CC
CH
SS
SH
CL
Min
7.5
2.5
2.5
1.5
0.8
10
3
3
1
7A
1000
Max
5.4
5.4
6
6
Rev. 1.5 May 2004
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
SDRAM
Note
1,2
1
2
3
3
3
3
2