M368L3223ETN Samsung, M368L3223ETN Datasheet - Page 10

• Manufacturer Part Number: M368L3223ETN
• Description: DDR SDRAM Unbuffered Module
• Manufacturer: Samsung

DDR SDRAM IDD spec table
M368L3223ETN [ (32M x 8) * 8, 256MB Non ECC Module ]
M381L3223ETM [ (32M x 8) * 9, 256MB ECC Module ]
256MB, 512MB Unbuffered DIMM
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
IDD6
IDD6
Symbol
Symbol
IDD4W
IDD4W
IDD2Q
IDD3N
IDD4R
IDD2Q
IDD3N
IDD4R
IDD2P
IDD2F
IDD3P
IDD7A
IDD2P
IDD2F
IDD3P
IDD7A
IDD0
IDD1
IDD5
IDD0
IDD1
IDD5
Low power
Low power
Normal
Normal
B3(DDR333@CL=2.5) AA(DDR266@CL=2) A2(DDR266@CL=2) B0(DDR266@CL=2.5) Unit
B3(DDR333@CL=2.5) AA(DDR266@CL=2) A2(DDR266@CL=2) B0(DDR266@CL=2.5)
1,280
1,280
1,360
2,240
1,040
1,440
1,440
1,530
2,520
720
920
200
160
280
440
810
230
180
320
500
24
24
12
27
27
14
1,040
1,220
1,440
2,520
1,120
1,080
1,280
2,240
1260
810
180
170
270
410
720
920
160
150
240
360
27
27
14
24
24
12
1,120
1,080
1,280
2,000
1,220
1,440
2,250
1260
640
840
160
150
240
360
720
950
180
170
270
410
24
24
12
27
27
14
Rev. 1.1 August. 2003
1,120
1,080
1,280
2,000
1,260
1,220
1,440
2,250
720
950
180
170
270
410
640
840
160
150
240
360
27
27
14
24
24
12
DDR SDRAM
(V
(V
DD
DD
=2.7V, T = 10°C)
=2.7V, T = 10°C)
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Optional
Optional
Notes
Notes