M470T2953Bxx Samsung semiconductor, M470T2953Bxx Datasheet - Page 12

• Manufacturer Part Number: M470T2953Bxx
• Description: 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC
• Manufacturer: Samsung semiconductor

Operating Current Table(1-2)
M470T2953BS(Y)3/M470T2953BS(Y)0 : 128Mx64 1GB Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Input/Output Capacitance
*
256MB, 512MB, 1GB Unbuffered SODIMMs
Input capacitance, CK and CK
Input capacitance, CKE , CS, Addr, RAS, CAS, WE
Input/output capacitance, DQ, DM, DQS, DQS
DM is internally loaded to match DQ and DQS identically.
IDD3P-F
IDD3P-S
Symbol
IDD4W
IDD2Q
IDD2P
IDD2N
IDD3N
IDD4R
IDD5B
IDD0
IDD1
IDD6
IDD7
Parameter
Non-ECC
(DDR533@CL=4)
(V
1,360
1,440
1,120
2,160
2,000
2,120
2,760
CD5
128
400
480
480
240
88
DD
=1.8V, V
(T
A
=0
o
C, VDD= 1.9V)
DDQ
Symbol
=1.8V, T
CCK
CIO
(DDR533@CL=4)
CI
1,160
1,160
1,720
1,960
LD5
760
920
128
400
400
240
240
520
80
A
=25
M470T6554BG(Z)3
M470T6554BG(Z)0
Min
-
-
-
o
C)
(DDR400@CL=3)
Max
32
34
10
1,280
1,320
1,040
1,680
1,680
2,000
2,680
CCC
128
400
480
480
240
88
M470T3354BG(Z)3
M470T3354BG(Z)0
Min
-
-
-
(DDR400@CL=3)
Max
24
34
6
1,000
1,000
1,720
1,960
LCC
760
840
128
400
400
240
240
520
80
Rev. 1.5 Aug. 2005
DDR2 SDRAM
M470T2953BS(Y)3
M470T2953BS(Y)0
Min
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Max
48
42
10
Notes
Units
pF