K9F4008W0A- Samsung semiconductor, K9F4008W0A- Datasheet

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... Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html. The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 Bit NAND Flash Memory FEATURES Voltage Supply : 2.7V ~ 5.5V Organization - Memory Cell Array : (4M + 128K)bit x 8bit - Data Register : (512 + 16)bit x8bit Automatic Program and Erase - ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 Figure 1. FUNCTIONAL BLOCK DIAGRAM X-Buffers Latches & Decoders Y-Buffers Latches & Decoders Command Command Register CE Control Logic RE & High Voltage WE ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 PRODUCT INTRODUCTION The K9F3208W0A is a 33Mbit(34,603,008 bit) memory organized as 8192 rows(pages) by 528 columns. Spare sixteen columns are located from column address of 512 to 527. A 528-byte data register is connected to memory cell arrays ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 PIN DESCRIPTION Command Latch Enable(CLE) The CLE input controls the path activation for commands sent to the command register. When active high, commands are latched into the command register through the I/O ports on the rising edge of ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative K9F3208W0A-TCB0 Temperature Under Bias K9F3208W0A-TIB0 Storage Temperature NOTE : 1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 VALID BLOCK Parameter Symbol Valid Block Number N NOTE : K9F3208W0A 1. The may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with both cases ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 AC Timing Characteristics for Command / Address / Data Input Parameter CLE Set-up Time CLE Hold Time CE Setup Time CE Hold Time WE Pulse Width ALE Setup Time ALE Hold Time Data Setup Time Data Hold Time ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 NAND Flash Technical Notes Invalid Block(s) Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. The infor- mation regarding the invalid block( called as the ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 NAND Flash Technical Notes (Continued) Error in write or read operation Over its life time, the additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual data.The following possible failure modes ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 NAND Flash Technical Notes (Continued) Erase Flow Chart Start Write 60h Write Block Address Write D0h Read Status Register I R Yes * No Erase Error I ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 Pointer Operation of K9F3208W0A The K9F3208W0A has three modes to set the destination of the pointer. The pointer is set to "A" area by the "00h" command, to "B" area by the "01h" command, and to "C" area ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 System Interface Using CE don’t-care. For a easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal 528byte page registers are utilized as seperate buffers for this operation and the ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 * Command Latch Cycle CLE t CLS ALS ALE I Address Latch Cycle t CLE ALE I CLH ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 * Input Data Latch Cycle CLE ALS WC ALE I/O ~ DIN Sequential Out Cycle after Read CE t REA RE I ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 * Status Read Cycle CLE t CLS I READ1 OPERATION (READ ONE PAGE) CLE ALE I/O ~ 00h or 01h 0 ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 READ1 OPERATION (INTERCEPTED BY CE) CLE CE WE ALE RE I/O ~ 00h or 01h Column Address R/B READ2 OPERATION (READ ONE PAGE) CLE CE WE ALE RE 50h A ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 SEQUENTIAL ROW READ OPERATION CLE CE WE ALE RE 00h I R/B M PAGE PROGRAM OPERATION CLE ALE RE ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 BLOCK ERASE OPERATION (ERASE ONE BLOCK) CLE ALE RE I/O ~ 60h Block Address R/B Auto Block Erase Setup Command MANUFACTURE & DEVICE ID READ ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 DEVICE OPERATION PAGE READ Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00h to the command reg- ister along with three address cycles. Once the command is latched, ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 Figure 4. Read2 Operation CLE CE WE ALE R/B RE Start Add.(3Cycle) 50h I & Don't Care) Figure 5. Sequential ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 Figure 6. Sequential Read2 Operation (SE=fixed low) R/B I 50h Start Add.(3Cycle & Don't Care) PAGE PROGRAM The device is ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 BLOCK ERASE The Erase operation can erase on a block(8K Byte) basis. Block address loading is accomplished in two cycles initiated by an Erase Setup command(60h). Only address The Erase Confirm command(D0h) following the ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 READ ID The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of 00h. Two read cycles sequentially output the manufacture code(ECh), and the device code (E3h) respectively. ...

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K9F3208W0A-TCB0, K9F3208W0A-TIB0 READY/BUSY The device has a R/ output that provides a hardware method of indicating the completion of a page program, erase and random B read completion. The R/B pin is normally high but transitions to low after program ...

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Package Dimensions DATA PROTECTION The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be ...

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Package Dimensions PACKAGE DIMENSIONS 44(40) LEAD PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(II) 44(40) - TSOP2 - 400F #44(40) #1 18.81 Max. 0.741 18.41 0.10 0.725 0.004 0.805 0.35 0.10 0.032 0.014 0.004 FLASH MEMORY 0.25 0.010 #23(21) #22(20) 0.15 0.006 ...