AR629AU9 National Semiconductor, AR629AU9 Datasheet - Page 8

• Manufacturer Part Number: AR629AU9
• Description: Gate Array
• Manufacturer: National Semiconductor

MNAR629A-X REV 0A0
TDBABR
TDASDS
TDCSAS
TDCSDS
TDCSFW
TDCSRW
TDHO
TDSO
TDSO
THAI
TSAI
TWAS
Electrical Characteristics
AC: SUBSYSTEM WRITE CHARACTERISTICS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC:
AC: INTERNAL REGISTER ACCESS CHARACTERISTICS
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC:
SYMBOL
Vdd = Vcc = 5V +5%, Vss = GND, -55 C <TA<+125 C, CL = 50pF
Vdd = Vcc = 5V +5%, Vss = GND, -55 C <TA<+125 C, CL = 50pF
Time from BUSA
Low to BUSR
Tri-State
Delay from ASO
High to DSO
falling edge
Delay from CS
falling edge to
ASO falling edge
Delay from DSO
rising edge to CS
rising edge
Delay from CS
falling edge to
WAIT High
Delay from CS
rising edge to
WAIT release
Data valid after
rising edge of
DSO
Error register
Data valid after
falling edge of
DSO
LWM/IVR DAta
Valid after
falling edge of
DSO
Address hold time
after rising edge
of ASO
Address setup
time prior to
rising edge of
ASO
Address strobe
pulse width
PARAMETER
0 WAIT, Vdd = 5V +5%
1 WAIT, Vdd = 5V +5%
MAX WAIT, Vdd = 4.75V
Vdd = 5V +5%
CONDITIONS
8
NOTES
MICROCIRCUIT DATA SHEET
PIN-
NAME
20
0
0
0
15
30
30
MIN
17T+61 nS
21T+61 nS
148T+6
1
26
27
2T+25
40
MAX
UNIT
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
10, 11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
GROUPS
SUB-