N28F010-65 Intel Corporation, N28F010-65 Datasheet

N28F010-65

Manufacturer Part Number

N28F010-65

Description

1024K (128K x 8) CMOS FLASH MEMORY

Manufacturer

Intel Corporation

Datasheet

1.N28F010-65.pdf (30 pages)

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Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read write

random access nonvolatile memory The 28F010 adds electrical chip-erasure and reprogramming to familiar

EPROM technology Memory contents can be rewritten in a test socket in a PROM-programmer socket on-

board during subassembly test in-system during final test and in-system after-sale The 28F010 increases

memory flexibility while contributing to time and cost savings

The 28F010 is a 1024 kilobit nonvolatile memory organized as 131 072 bytes of 8 bits Intel’s 28F010 is

offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages Pin assignments conform to JEDEC

standards for byte-wide EPROMs

Extended erase and program cycling capability is designed into Intel’s ETOX (EPROM Tunnel Oxide) process

technology Advanced oxide processing an optimized tunneling structure and lower electric field combine to

extend reliable cycling beyond that of traditional EEPROMs With the 12 0V V

100 000 erase and program cycles well within the time limits of the Quick Pulse Programming and Quick Erase

algorithms

Intel’s 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds low

power consumption and immunity to noise Its 65 nanosecond access time provides no-WAIT-state perform-

ance for a wide range of microprocessors and microcontrollers Maximum standby current of 100 A trans-

lates into power savings when the device is deselected Finally the highest degree of latch-up protection is

achieved through Intel’s unique EPI processing Prevention of latch-up is provided for stresses up to 100 mA

on address and data pins from

With Intel’s ETOX process base the 28F010 builds on years of EPROM experience to yield the highest levels

of quality reliability and cost-effectiveness

Flash Electrical Chip-Erase

Quick Pulse Programming Algorithm

100 000 Erase Program Cycles

12 0V

High-Performance Read

CMOS Low Power Consumption

Integrated Program Erase Stop Timer

Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or

copyright for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products Intel retains the right to make

changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata

Other brands and names are the property of their respective owners

1 Second Typical Chip-Erase

10 s Typical Byte-Program

2 Second Chip-Program

65 ns Maximum Access Time

10 mA Typical Active Current

50 A Typical Standby Current

0 Watts Data Retention Power

5% V

INTEL CORPORATION 1995

1024K (128K x 8) CMOS FLASH MEMORY

1V to V

28F010

November 1995

Command Register Architecture for

Microprocessor Microcontroller

Compatible Write Interface

Noise Immunity Features

ETOX

JEDEC-Standard Pinouts

(See Packaging Spec Order

Extended Temperature Options

Maximum Latch-Up Immunity

through EPI Processing

EPROM-Compatible Process Base

High-Volume Manufacturing

Experience

32-Pin Plastic Dip

32-Lead PLCC

32-Lead TSOP

10% V

Nonvolatile Flash Technology

Tolerance

supply the 28F010 performs

231369)

Order Number 290207-010

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