K7R161884B-FC25 Samsung semiconductor, K7R161884B-FC25 Datasheet - Page 12

• Manufacturer Part Number: K7R161884B-FC25
• Description: 512Kx36 & 1Mx18 QDR II b4 SRAM
• Manufacturer: Samsung semiconductor

THERMAL RESISTANCE
Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site
K7R163684B
K7R161884B
PIN CAPACITANCE
Note: 1. Parameters are tested with RQ=250Ω and V
APPLICATION INRORMATION
Junction to Ambient
Junction to Case
MEMORY
CONTROLLER
Address Control Input Capacitance
Input and Output Capacitance
Clock Capacitance
thermal impedance. T
2. Periodically sampled and not 100% tested.
SRAM1 Input CQ
SRAM1 Input CQ
SRAM4 Input CQ
SRAM4 Input CQ
Source CLK
Source CLK
Return CLK
Return CLK
Data Out
Address
PRMETER
PRMETER
Data In
BW
W
R
J
=T
A
Vt
+ P
R
R=50Ω Vt=V
D
x θ
JA
Vt
Vt
D
SA
REF
R W BW
DDQ
SYMBOL
=1.5V.
C
C
C
OUT
CLK
IN
SRAM#1
SYMBOL
θ
θ
0
JA
JC
BW
1
512Kx36 & 1Mx18 QDR
- 12 -
TESTCONDITION
C C
V
V
OUT
K
IN
CQ
Q
CQ
ZQ R=250Ω
=0V
-
K
=0V
TYP
17.1
3.3
TYP
D
SA
R
4
6
5
Vt
Vt
RW BW
MAX
5
7
6
SRAM#4
TM
0
°C
°C
Unit
BW
/W
/W
II b4 SRAM
Unit
pF
pF
pF
1
C C
July. 2004
NOTES
NOTES
CQ
K
ZQ
CQ
ZQ
Q
Rev 3.1
K
R=250Ω