K6T4008U1C-B Samsung semiconductor, K6T4008U1C-B Datasheet - Page 4

• Manufacturer Part Number: K6T4008U1C-B
• Description: 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
• Manufacturer: Samsung semiconductor

K6T4008V1C, K6T4008U1C Family
RECOMMENDED DC OPERATING CONDITIONS
Note:
1. Commercial Product : T
2. Overshoot : V
3. Undershoot : -2.0V in case of pulse width
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
1. Industrial product = 20 A
Supply voltage
Ground
Input high voltage
Input low voltage
Input capacitance
Input/Output capacitance
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current (CMOS)
Industrial Product : T
Item
CC
Item
+2.0V in case of pulse width
Item
A
=-40 to 85 C, otherwise specified
1)
A
=0 to 70 C, otherwise specified
(f=1MHz, T
Symbol
Vcc
Vss
V
V
Symbol
IH
IL
A
I
I
V
V
I
=25 C)
I
I
CC1
CC2
I
SB1
I
CC
LO
SB
OH
LI
OL
30ns
Symbol
K6T4008V1C, K6T4008U1C Family
K6T4008V1C, K6T4008U1C Family
30ns
C
C
V
CS=V
I
Cycle time=1 s, 100% duty, I
Cycle time=Min, 100% duty, I
I
I
CS=V
CS Vcc-0.2V, Other inputs=0~Vcc
IO
OL
OH
IN
IO
IN
=0mA, CS=V
=2.1mA
=Vss to Vcc
=-1.0mA
IH
IH
K6T4008V1C Family
K6T4008U1C Family
, Other inputs = V
or OE=V
All Family
Product
IL
Test Condition
IH
, V
or WE=V
IN
V
V
Test Conditions
=V
IO
IN
IO
=0mA CS 0.2V,V
=0V
=0V
IL
4
1)
IL
IO
or V
=0mA, CS=V
or V
IL
V
IH
IH
IO
, Read
=Vss to Vcc
IN
0.2V or V
IL,
-0.3
Min
3.0
2.7
2.2
V
0
IN
=V
3)
Min
IN
IH
-
-
Vcc-0.2V
or V
IL
Typ
3.3
3.0
0
-
-
CMOS SRAM
Max
Min
2.2
10
-1
-1
8
Vcc+0.3
-
-
-
-
-
-
Max
3.6
3.3
0.6
0
Typ
-
-
-
-
-
-
-
-
-
2)
January 1999
Revision 1.0
Max Unit
15
0.4
0.3
30
1
1
4
4
-
Unit
1)
pF
pF
Unit
V
V
V
V
mA
mA
mA
mA
V
V
A
A
A