QM30 Mitsubishi Electric Semiconductor, QM30 Datasheet - Page 3

• Manufacturer Part Number: QM30
• Description: MEDIUM POWER SWITCHING USE INSULATED TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

PERFORMANCE CURVES
10
100
10
10
80
60
40
20
–1
0
7
5
4
3
2
7
5
4
3
2
5
4
3
2
1
0
1
0
10
COLLECTOR-EMITTER VOLTAGE V
1.0
0
COLLECTOR-EMITTER SATURATION
–2
T
BASE-EMITTER VOLTAGE V
T
V
j
=25°C
CHARACTERISTICS (TYPICAL)
j
CE
COMMON EMITTER OUTPUT
=25°C
CHARACTERISTIC (TYPICAL)
2
COMMON EMITTER INPUT
=2.0V
1.4
1
BASE CURRENT I
3
VOLTAGE (TYPICAL)
4
I
5
C
1.8
=10A
2
7
10
–1
2.2
3
I
C
2
=20A
B
T
T
3
j
j
(A)
=25°C
=125°C
I
I
I
I
I
I
2.6
C
B
B
B
B
B
4
4
=30A
=2.0A
=1.0A
=0.5A
=0.3A
=0.1A
BE
5
(V)
CE
7
3.0
10
(V)
5
0
10
10
10
10
10
10
10
10
10
–1
–1
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
7
5
4
3
3
2
7
7
5
4
3
2
1
3
2
1
0
1
0
10
10
10
0
0
SWITCHING TIME VS. COLLECTOR
0
I
I
COLLECTOR CURRENT (TYPICAL)
V
t
MITSUBISHI TRANSISTOR MODULES
B
B1
on
=0.4A
CC
t
t
f
CHARACTERISTICS (TYPICAL)
s
=–I
COLLECTOR CURRENT I
COLLECTOR CURRENT I
COLLECTOR CURRENT I
=300V
2 3 4 5 7
2 3 4 5 7
2 3 4 5 7
MEDIUM POWER SWITCHING USE
T
T
T
T
DC CURRENT GAIN VS.
SATURATION VOLTAGE
T
T
B2
j
j
j
j
=125°C
=25°C
=25°C
=125°C
j
j
=25°C
=125°C
CURRENT (TYPICAL)
V
=0.6A
BE(sat)
V
CE
V
=2.0V
CE(sat)
10
10
10
1
1
1
2 3 4 5 7
2 3 4 5 7
2 3 4 5 7
V
QM30DY-H
CE
C
C
C
INSULATED TYPE
=5.0V
(A)
(A)
(A)
10
10
10
2
2
2
Feb.1999