GS74108AGJ-10 GSI [GSI Technology], GS74108AGJ-10 Datasheet - Page 3

• Manufacturer Part Number: GS74108AGJ-10
• Description: 512K x 8 4Mb Asynchronous SRAM
• Manufacturer: GSI [GSI Technology]

Truth Table
Note:
X: “H” or “L”
Absolute Maximum Ratings
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Notes:
1.
2.
Rev: 1.07 1/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Input overshoot voltage should be less than V
Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Supply Voltage for -8/-10/-12
Allowable power dissipation
CE
H
L
L
L
Ambient Temperature,
Ambient Temperature,
Storage temperature
Commercial Range
Input High Voltage
Input Low Voltage
Industrial Range
Supply Voltage
Output Voltage
Parameter
Input Voltage
Parameter
OE
X
X
H
L
WE
X
H
H
L
Symbol
Symbol
V
V
T
V
T
DD
V
T
Ac
IH
A
IL
V
V
PD
I
OUT
STG
DD
IN
DD
+2 V and not exceed 20 ns.
Min
–0.3
–40
3.0
2.0
0
3/13
–0.5 to V
–0.5 to V
DQ
(≤ 4.6 V max.)
(≤ 4.6 V max.)
Not Selected
–0.5 to +4.6
–55 to 150
Rating
1
High Z
Read
Write
0.7
to DQ
DD
DD
Typ
3.3
—
—
—
—
+0.5
+0.5
8
V
DD
Max
3.6
0.8
70
85
+0.3
Unit
o
W
V
V
V
C
Unit
o
o
V
V
V
C
C
© 2001, Giga Semiconductor, Inc.
V
DD
ISB
GS74108ATP/J/X
Current
1
I
DD
, ISB
2